Philips Semiconductors

BUK9510-55A; BUK9610-55A

TrenchMOS™ logic level FET

Product data

Rev. 01 — 20 August 2001

2 of 14

9397 750 08555

© Koninklijke Philips Electronics N.V. 2001. All rights reserved.

5.

Quick reference data

6.

Limiting values

[1]

Current is limited by power dissipation chip rating

[2]

Continuous current is limited by package

Table 2:

Quick reference data

Symbol Parameter

Conditions

Typ

Max

Unit

drain-source voltage (DC)

-

55

V

drain current (DC)

[1]

-

100

A

total power dissipation

-

200

W

junction temperature

-

175

°C

drain-source on-state resistance

8

10

m

Ω

-

11

m

Ω

7

9

m

Ω

Table 3:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

drain-source voltage (DC)

-

55

V

drain-gate voltage (DC)

-55

V

gate-source voltage (DC)

-

±15

V

drain current (DC)

Figure 2 and 3

[1]

-

100

A

[2]

-75

A

[2]

-70

A

peak drain current

Figure 3

-

400

A

total power dissipation

-

200

W

storage temperature

−55

+175

°C

operating junction temperature

−55

+175

°C

Source-drain diode

reverse drain current (DC)

[1]

-

100

A

[2]

-75

A

pulsed reverse drain current

-

400

A

Avalanche ruggedness

non-repetitive avalanche energy

-

333

mJ