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BUK9511-55A Datasheet(PDF) 3 Page - NXP Semiconductors |
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BUK9511-55A Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 15 page Philips Semiconductors BUK9511-55A; BUK9611-55A TrenchMOS™ logic level FET Product specification Rev. 01 — 7 February 2001 3 of 15 9397 750 07916 © Philips Electronics N.V. 2001. All rights reserved. VGS ≥ 4.5 V Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Normalized continuous drain current as a function of mounting base temperature. Tmb =25 °C; IDM single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 03na19 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 200 P der Tmb ( o C) (%) 03aa24 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 200 I der (%) T mb ( o C) P der P tot P tot 25 C ° () ---------------------- 100% × = I der I D I D25 C ° () ------------------- 100% × = 03nd78 1 10 102 103 1 10 102 VDS (V) ID (A) D.C. 100 ms 10 ms RDSon = VDS/ ID 1 ms tp = 10 us 100 us tp tp T P t T δ = |
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