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GS82032AT-180 Datasheet(PDF) 10 Page - GSI Technology

No. de pieza GS82032AT-180
Descripción Electrónicos  64K x 32 2M Synchronous Burst SRAM
Download  23 Pages
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Fabricante Electrónico  GSI [GSI Technology]
Página de inicio  http://www.gsitechnology.com
Logo GSI - GSI Technology

GS82032AT-180 Datasheet(HTML) 10 Page - GSI Technology

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Rev: 1.09 7/2002
10/23
© 2000, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS82032AT/Q-180/166/133/100
Note: This parameter is sample tested.
Notes:
1. Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temper-
ature air flow, board density, and PCB thermal resistance.
2. SCMI G-38-87
3. Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1
4.
For x18 configuration, consult factory.
Capacitance
(TA = 25°C, f = 1 MHZ, VDD = 3.3 V)
Parameter
Symbol
Test conditions
Typ.
Max.
Unit
Control Input Capacitance
CI
VDD = 3.3 V
34
pF
Input Capacitance
CIN
VIN = 0 V
45
pF
Output Capacitance
COUT
VOUT = 0 V
67
pF
Package Thermal Characteristics
Rating
Layer Board
Symbol
TQFP Max
QFP Max
Unit
Notes
Junction to Ambient (at 200 lfm)
single
RΘJA
40
TBD
°C/W
1,2,4
Junction to Ambient (at 200 lfm)
four
RΘJA
24
TBD
°C/W
1,2,4
Junction to Case (TOP)
RΘJC
9TBD
°C/W
3,4
20% tKC
VSS – 2.0 V
50%
VSS
VIH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
VDD +- 2.0 V
50%
VDD
VIL


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