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FDG6313N Datasheet(Hoja de datos) 1 Page - Fairchild Semiconductor

No. de Pieza. FDG6313N
Descripción  Dual N-Channel, Digital FET
Descarga  5 Pages
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Fabricante  FAIRCHILD [Fairchild Semiconductor]
Página de inicio  http://www.fairchildsemi.com
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April 2002
FDG6313N
Dual N-Channel, Digital FET
General Description
Features
* The pinouts are symmetrical; pin 1 and 4 are interchangeable.
Units inside the carrier can be of either orientation and will not affect the functionality of the device.
Absolute Maximum Ratings T
A = 25°C unless otherwise noted
Symbol
Parameter
FDG6313N
Units
V
DSS
Drain-Source Voltage
25
V
V
GSS
Gate-Source Voltage
V
I
D
Drain/Output Current
- Continuous
0.5
A
- Pulsed
1.5
P
D
Maximum Power Dissipation
(Note 1)
0.3
W
T
J,TSTG
Operating and Storage Temperature Range
-55 to 150
°C
ESD
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100 pF / 1500
)
6.0
kV
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
415
°C/W
FDG6313N Rev.A
25 V, 0.50 A continuous, 1.5 A peak.
R
DS(ON) = 0.45 @ VGS= 4.5 V,
R
DS(ON) =0.60 @ VGS= 2.7 V.
Very low level gate drive requirements allowing direct
operation in 3 V circuits (V
GS(th) < 1.5 V).
Gate-Source Zener for ESD ruggedness
(>6kV Human Body Model).
Compact industry standard SC70-6 surface
mount package.
These dual N-Channel logic level enhancement mode
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to
minimize on-state resistance. This device has been
designed especially for low voltage applications as a
replacement for bipolar digital transistors and small
signal MOSFETs.
SOT-23
SuperSOT
TM-8
SO-8
SOT-223
SC70-6
SuperSOT
TM-6
1 or 4
*
6 or 3
5 or 2
4 or 1
*
2 or 5
3 or 6
SC70-6
G1
D2
S1
D1
S2
G2
.33
- 0.5 to +8




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