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2N5631 Datasheet(PDF) 2 Page - ON Semiconductor |
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2N5631 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 8 page 2N5631 2N6031 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (2) (IC = 200 mAdc, IB = 0) VCEO(sus) 140 – Vdc Collector–Emitter Cutoff Current (VCE = 70 Vdc, IB = 0) ICEO – 2.0 mAdc Collector–Emitter Cutoff Current (VCE = Rated VCB, VEB(off) = 1.5 Vdc) (VCE = Rated VCB, VEB(off) = 1.5 Vdc, TC = 150_C) ICEX – – 2.0 7.0 mAdc Collector–Base Cutoff Current (VCB = Rated VCB, IE = 0) ICBO – 2.0 mAdc Emitter–Base Cutoff Current (VBE = 7.0 Vdc, IC = 0) IEBO – 5.0 mAdc ON CHARACTERISTICS (2) DC Current Gain (IC = 8 Adc, VCE = 2.0 Vdc) (IC = 16 Adc, VCE = 2.0 Vdc) hFE 15 4.0 60 – – Collector–Emitter Saturation Voltage (IC = 10 Adc, IB = 1.0 Adc) (IC = 16 Adc, IB = 4.0 Adc) VCE(sat) – – 1.0 2.0 Vdc Base–Emitter Saturation Voltage (IC = 10 Adc, IB = 1.0 Adc) VBE(sat) – 1.8 Vdc Base–Emitter On Voltage (IC = 8.0 Adc, VCE = 2.0 Vdc) VBE(on) – 1.5 Vdc DYNAMIC CHARACTERISTICS Current–Gain – Bandwidth Product (3) (IC = 1.0 Adc, VCE = 20 Vdc, ftest = 0.5 MHz) fT 1.0 – MHz Output Capacitance 2N5631 (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N6031 Cob – – 500 1000 pF Small–Signal Current Gain (IC = 4.0 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 15 – – *Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width v300 µs, Duty Cycle w 2.0%. (2) fT = |hfe| • ftest Figure 2. Switching Times Test Circuit +11 V 25 µs 0 -9.0 V RB -4 V D1 SCOPE VCC +30 V RC tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 3.0 0.2 Figure 3. Turn–On Time IC, COLLECTOR CURRENT (AMP) 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.03 0.3 0.5 0.7 1.0 2.0 3.0 7.0 20 TJ = 25°C IC/IB = 10 VCE = 30 V 0.07 0.05 5.0 10 tr td @ VBE(off) = 5.0 V 51 RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA For PNP test circuit, reverse all polarities and D1. 2N5631 2N6031 |
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