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2N6341 Datasheet(PDF) 2 Page - ON Semiconductor

No. de Pieza. 2N6341
Descripción  POWER TRANSISTORS NPN SILICON
Descarga  4 Pages
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Fabricante  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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2N6341 Datasheet(HTML) 2 Page - ON Semiconductor

   
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2N6338 2N6341
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*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
2N6338
(IC = 50 mAdc, IB = 0)
2N6341
VCEO(sus)
100
150
Vdc
Collector Cutoff Current
(VCE = 50 Vdc, IB = 0)
2N6338
(VCE = 75 Vdc, IB = 0)
2N6341
ICEO
50
50
µAdc
Collector Cutoff Current
(VCE = Rated VCEO, VEB(off) = 1.5 Vdc)
(VCE = Rated VCEO, VEB(off) = 1.5 Vdc, TC = 150_C)
ICEX
10
1.0
µAdc
mAdc
Collector Cutoff Current (VCB = Rated VCB, IE = 0)
ICBO
10
µAdc
Emitter Cutoff Current (VBE = 6.0 Vdc, IC = 0)
IEBO
100
µAdc
ON CHARACTERISTICS (1)
DC Current Gain)
(IC = 0.5 Adc, VCE = 2.0 Vdc)
(IC = 10 Adc, VCE = 2.0 Vdc)
(IC = 25 Adc, VCE = 2.0 Vdc)
hFE
50
30
12
120
Collector Emitter Saturation Voltage
(IC = 10 Adc, IB = 1.0 Adc)
(IC = 25 Adc, IB = 2.5 Adc)
VCE(sat)
1.0
1.8
Vdc
Base–Emitter Saturation Voltage
(IC = 10 Adc, IB = 1.0 Adc)
(IC = 25 Adc, IB = 2.5 Adc)
VBE(sat)
1.8
2.5
Vdc
Base–Emitter On Voltage (IC = 10 Adc, VCE = 2.0 Vdc)
VBE(on)
1.8
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain – Bandwidth Product (2)
(IC = 1.0 Adc, VCE = 10 Vdc, ftest = 10 MHz)
fT
40
MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
300
pF
SWITCHING CHARACTERISTICS
Rise Time (VCC ≈ 80 Vdc, IC = 10Adc, IB1 = 1.0 Adc, VBE(off) = 6.0 Vdc)
tr
0.3
µs
Storage Time (VCC ≈ 80 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc)
ts
1.0
µs
Fall Time (VCC ≈ 80 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc)
tf
0.25
µs
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width
v 300 µs, Duty Cycle v 2.0%.
(2) fT = |hfe| • ftest.
Figure 2. Switching Time Test Circuit
1000
0.3
Figure 3. Turn–On Time
IC, COLLECTOR CURRENT (AMP)
500
100
70
50
10
0.5 0.7
2.0 3.0
7.0
30
+ 11 V
0
VCC
SCOPE
RB
10 OHMS
- 5.0 V
tr, tf v 10 ns
DUTY CYCLE = 1.0%
RC
8.0 OHMS
20
30
5.0
20
10 µs
- 9.0 V
700
200
300
1.0
10
NOTE: For information on Figures 3 and 6, RB and RC were
varied to obtain desired test conditions.
+ 80 V
1N4933
td @ VBE(off) = 6.0 V
VCC = 80 V
IC/IB = 10
TJ = 25°C
tr


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