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MURH7010R Datasheet(PDF) 1 Page - GeneSiC Semiconductor, Inc.

No. de Pieza. MURH7010R
Descripción  Silicon Super Fast Recovery Diode
Descarga  3 Pages
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Fabricante  GENESIC [GeneSiC Semiconductor, Inc.]
Página de inicio  http://www.genesicsemi.com/
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MURH7010R Datasheet(HTML) 1 Page - GeneSiC Semiconductor, Inc.

   
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VRRM = 50 V - 200 V
IF(AV) = 70 A
Features
• High Surge Capability
D-67 Package
• Types from 50 V to 200 V V
RRM
• Not ESD Sensitive
Parameter
Symbol
MURH7005(R)
MURH7010(R)
Unit
Repetitive peak reverse voltage
VRRM
50
100
V
RMS reverse voltage
VRMS
35
70
V
DC blocking voltage
VDC
50
100
V
Operating temperature
Tj
-55 to 150
-55 to 150
°C
Storage temperature
Tstg
-55 to 150
-55 to 150
°C
Parameter
Symbol
MURH7005(R)
MURH7010(R)
Unit
Average forward current (per
pkg)
IF(AV)
70
70
A
Peak forward surge current
IFSM
1500
1500
A
Maximum instantaneous
forward voltage
1.0
1.0
25
25
μA
3
3
mA
Maximum reverse recovery time
Trr
75
75
nS
Thermal characteristics
Maximum thermal resistance,
junction - case
RΘJC
0.60
0.60
°C/W
-55 to 150
1.0
MURH7020(R)
3
Tj = 25 °C
0.60
75
MURH7005 thru MURH7020R
Tj = 125 °C
IFM = 70 A, Tj = 25 °C
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
MURH7020(R)
200
140
200
Silicon Super Fast
Recovery Diode
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Conditions
TC = 125 °C
70
tp = 8.3 ms, half sine
1500
VF
V
Maximum reverse current at
rated DC blocking voltage
IR
25
IF=0.5 A, IR=1.0 A,
IRR= 0.25 A
1
Oct. 2018
http://www.diodemodule.com/silicon_products/modules/murh7005.pdf


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