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MURT40010R Datasheet(PDF) 1 Page - GeneSiC Semiconductor, Inc.

No. de Pieza. MURT40010R
Descripción  Silicon Super Fast Recovery Diode
Descarga  3 Pages
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Fabricante  GENESIC [GeneSiC Semiconductor, Inc.]
Página de inicio  http://www.genesicsemi.com/
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MURT40010R Datasheet(HTML) 1 Page - GeneSiC Semiconductor, Inc.

   
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VRRM = 50 V - 200 V
IF(AV) = 400 A
Features
• High Surge Capability
Three Tower Package
• Types from 50 V to 200 V V
RRM
• Isolation Type Package
• Electrically Isolated base plate
• Not ESD Sensitive
Parameter
Symbol
MURT40005(R)
MURT40010(R)
Unit
Repetitive peak reverse voltage
VRRM
50
100
V
RMS reverse voltage
VRMS
35
71
V
DC blocking voltage
VDC
50
100
V
Operating temperature
Tj
-55 to 150
-55 to 150
°C
Storage temperature
Tstg
-55 to 150
-55 to 150
°C
Parameter
Symbol
MURT40005(R)
MURT40010(R)
Unit
Average forward current (per
pkg)
IF(AV)
400
400
A
Peak forward surge current (per
leg)
IFSM
3300
3300
A
Maximum instantaneous
forward voltage (per leg)
1.0
1.0
25
25
μA
3
3
mA
Maximum reverse recovery
time (per leg)
Trr
150
150
nS
Thermal characteristics
Thermal resistance, junction -
case (per leg)
RΘJC
0.35
0.35
°C/W
MURT40005 thru MURT40020R
Tj = 25 °C
IFM = 200 A, Tj = 25 °C
Conditions
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
MURT40020(R)
200
141
200
V
Silicon Super Fast
Recovery Diode
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Maximum instantaneous
reverse current at rated DC
blocking voltage (per leg)
IR
VF
Tj = 125 °C
MURT40020(R)
-55 to 150
-55 to 150
1.0
25
TC = 125 °C
400
tp = 8.3 ms, half sine
3300
IF=0.5 A, IR=1.0 A,
IRR= 0.25 A
150
0.35
3
1
Oct. 2018
http://www.diodemodule.com/silicon_products/modules/murt40005.pdf


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