2N6507 datasheet(1/8 Pages) ONSEMI

No. de pieza	2N6507

Descripción Electrónicos	Silicon Controlled Rectifiers

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Fabricante Electrónico	ONSEMI [ON Semiconductor]

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April, 2001 – Rev. 4

1

Publication Order Number:

2N6504/D

2N6504 Series

Preferred Device

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

Designed primarily for half-wave ac control applications, such as

motor controls, heating controls and power supply crowbar circuits.

• Glass Passivated Junctions with Center Gate Fire for Greater

Parameter Uniformity and Stability

• Small, Rugged, Thermowatt Constructed for Low Thermal

Resistance, High Heat Dissipation and Durability

• Blocking Voltage to 800 Volts

• 300 A Surge Current Capability

• Device Marking: Logo, Device Type, e.g., 2N6504, Date Code

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

*Peak Repetitive Off–State Voltage (Note 1.)

(Gate Open, Sine Wave 50 to 60 Hz,

TJ = 25 to 125°C)

2N6504

2N6505

2N6507

2N6508

2N6509

VDRM,

VRRM

50

100

400

600

800

Volts

On-State RMS Current

(180

° Conduction Angles; TC = 85°C)

IT(RMS)

25

A

Average On-State Current

(180

° Conduction Angles; TC = 85°C)

IT(AV)

16

A

Peak Non-repetitive Surge Current

(1/2 Cycle, Sine Wave 60 Hz, TJ = 100°C)

ITSM

250

A

Forward Peak Gate Power

(Pulse Width

≤ 1.0 µs, TC = 85°C)

PGM

20

Watts

Forward Average Gate Power

(t = 8.3 ms, TC = 85°C)

PG(AV)

0.5

Watts

Forward Peak Gate Current

(Pulse Width

≤ 1.0 µs, TC = 85°C)

IGM

2.0

A

Operating Junction Temperature Range

TJ

–40 to

+125

°C

Storage Temperature Range

Tstg

–40 to

+150

°C

*Indicates JEDEC Registered Data

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings

apply for zero or negative gate voltage; however, positive gate voltage shall

not be applied concurrent with negative potential on the anode. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

SCRs

25 AMPERES RMS

50 thru 800 VOLTS

Preferred devices are recommended choices for future use

and best overall value.

Device

Package

Shipping

ORDERING INFORMATION

2N6504

TO220AB

500/Box

2N6505

TO220AB

2N6507

TO220AB

http://onsemi.com

500/Box

K

G

A

TO–220AB

CASE 221A

STYLE 3

1

2

3

4

PIN ASSIGNMENT

1

2

3

Anode

Gate

Cathode

4

Anode

2N6508

TO220AB

500/Box

2N6509

TO220AB

500/Box

MARKING

DIAGRAM

YY WW

650x

x

= 4, 5, 7, 8 or 9

YY = Year

WW = Work Week

Número de pieza similar - 2N6507

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
ON Semiconductor	2N6507	63Kb / 7P	Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS February, 2006 ??Rev. 7
New Jersey Semi-Conduct...	2N6507	204Kb / 2P	THYRISTORS SILICON CONTROLLED RECTIFIERS
Digitron Semiconductors	2N6507	212Kb / 4P	SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS
Kersemi Electronic Co.,...	2N6507	402Kb / 6P	Silicon Controlled Rectifiers
ON Semiconductor	2N6507G	63Kb / 7P	Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS February, 2006 ??Rev. 7

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