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KM736V887 Datasheet(PDF) 9 Page - Samsung semiconductor |
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KM736V887 Datasheet(HTML) 9 Page - Samsung semiconductor |
9 / 21 page KM718V987 256Kx36 & 512Kx18 Synchronous SRAM - 9 - Rev 4.0 May 1999 KM736V887 ABSOLUTE MAXIMUM RATINGS* *Notes : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. PARAMETER SYMBOL RATING UNIT Voltage on VDD Supply Relative to VSS VDD -0.3 to 4.6 V Voltage on VDDQ Supply Relative to VSS VDDQ VDD V Voltage on Input Pin Relative to VSS VIN -0.3 to 4.6 V Voltage on I/O Pin Relative to VSS VIO -0.3 to VDDQ+0.5 V Power Dissipation PD 1.4 W Storage Temperature TSTG -65 to 150 °C Operating Temperature TOPR 0 to 70 °C Storage Temperature Range Under Bias TBIAS -10 to 85 °C CAPACITANCE*(TA=25 °C, f=1MHz) *Note : Sampled not 100% tested. PARAMETER SYMBOL TEST CONDITION MIN MAX UNIT Input Capacitance CIN VIN=0V - 6 pF Output Capacitance COUT VOUT=0V - 8 pF ASYNCHRONOUS TRUTH TABLE Operation ZZ OE I/O STATUS Sleep Mode H X High-Z Read L L DQ L H High-Z Write L X Din, High-Z Deselected L X High-Z Notes 1. X means "Don ′t Care". 2. ZZ pin is pulled down internally 3. For write cycles that following read cycles, the output buffers must be disabled with OE, otherwise data bus contention will occur. 4. Sleep Mode means power down state of which stand-by current does not depend on cycle time. 5. Deselected means power down state of which stand-by current depends on cycle time. OPERATING CONDITIONS at 3.3V I/O(0 °C ≤ TA ≤ 70°C) PARAMETER SYMBOL MIN Typ. MAX UNIT Supply Voltage VDD 3.135 3.3 3.465 V VDDQ 3.135 3.3 3.465 V Ground VSS 0 0 0 V OPERATING CONDITIONS at 2.5V I/O(0 °C ≤ TA ≤ 70°C) PARAMETER SYMBOL MIN Typ. MAX UNIT Supply Voltage VDD 3.135 3.3 3.465 V VDDQ 2.375 2.5 2.9 V Ground VSS 0 0 0 V |
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