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KM736V887 Datasheet(PDF) 9 Page - Samsung semiconductor

No. de pieza KM736V887
Descripción Electrónicos  256Kx36 & 512Kx18 Synchronous SRAM
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Fabricante Electrónico  SAMSUNG [Samsung semiconductor]
Página de inicio  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM736V887 Datasheet(HTML) 9 Page - Samsung semiconductor

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KM718V987
256Kx36 & 512Kx18 Synchronous SRAM
- 9 -
Rev 4.0
May 1999
KM736V887
ABSOLUTE MAXIMUM RATINGS*
*Notes : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
PARAMETER
SYMBOL
RATING
UNIT
Voltage on VDD Supply Relative to VSS
VDD
-0.3 to 4.6
V
Voltage on VDDQ Supply Relative to VSS
VDDQ
VDD
V
Voltage on Input Pin Relative to VSS
VIN
-0.3 to 4.6
V
Voltage on I/O Pin Relative to VSS
VIO
-0.3 to VDDQ+0.5
V
Power Dissipation
PD
1.4
W
Storage Temperature
TSTG
-65 to 150
°C
Operating Temperature
TOPR
0 to 70
°C
Storage Temperature Range Under Bias
TBIAS
-10 to 85
°C
CAPACITANCE*(TA=25
°C, f=1MHz)
*Note : Sampled not 100% tested.
PARAMETER
SYMBOL
TEST CONDITION
MIN
MAX
UNIT
Input Capacitance
CIN
VIN=0V
-
6
pF
Output Capacitance
COUT
VOUT=0V
-
8
pF
ASYNCHRONOUS TRUTH TABLE
Operation
ZZ
OE
I/O STATUS
Sleep Mode
H
X
High-Z
Read
L
L
DQ
L
H
High-Z
Write
L
X
Din, High-Z
Deselected
L
X
High-Z
Notes
1. X means "Don
t Care".
2. ZZ pin is pulled down internally
3. For write cycles that following read cycles, the output buffers must be
disabled with OE, otherwise data bus contention will occur.
4. Sleep Mode means power down state of which stand-by current does
not depend on cycle time.
5. Deselected means power down state of which stand-by current
depends on cycle time.
OPERATING CONDITIONS at 3.3V I/O(0
°C ≤ TA ≤ 70°C)
PARAMETER
SYMBOL
MIN
Typ.
MAX
UNIT
Supply Voltage
VDD
3.135
3.3
3.465
V
VDDQ
3.135
3.3
3.465
V
Ground
VSS
0
0
0
V
OPERATING CONDITIONS at 2.5V I/O(0
°C ≤ TA ≤ 70°C)
PARAMETER
SYMBOL
MIN
Typ.
MAX
UNIT
Supply Voltage
VDD
3.135
3.3
3.465
V
VDDQ
2.375
2.5
2.9
V
Ground
VSS
0
0
0
V


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