BC638 datasheet(1/4 Pages) ONSEMI

No. de pieza	BC638

Descripción Electrónicos	High Current Transistors(PNP Silicon)

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Fabricante Electrónico	ONSEMI [ON Semiconductor]

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June, 2000 – Rev. 1

1

Publication Order Number:

BC636/D

BC636, BC636-16, BC638,

BC640, BC640-16

High Current Transistors

PNP Silicon

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

BC636

BC638

BC640

VCEO

–45

–60

–80

Vdc

Collector-Base Voltage

BC636

BC638

BC640

VCBO

–45

–60

–80

Vdc

Emitter-Base Voltage

VEBO

–5.0

Vdc

Collector Current — Continuous

IC

–0.5

Adc

Total Device Dissipation

@ TA = 25°C

Derate above 25

°C

PD

625

5.0

mW

mW/

°C

Total Device Dissipation

@ TC = 25°C

Derate above 25

°C

PD

1.5

12

Watts

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

–55 to

+150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance,

Junction to Ambient

R

θJA

200

°C/W

Thermal Resistance,

Junction to Case

R

θJC

83.3

°C/W

Device

Package

Shipping

ORDERING INFORMATION

BC636

TO–92

http://onsemi.com

CASE 29

TO–92

STYLE 14

5000 Units/Box

3

2

1

BC636ZL1

TO–92

2000/Ammo Pack

COLLECTOR

2

3

BASE

1

EMITTER

BC636–16ZL1

TO–92

2000/Ammo Pack

BC638

TO–92

5000 Units/Box

BC638ZL1

TO–92

2000/Ammo Pack

BC640

TO–92

5000 Units/Box

BC640ZL1

TO–92

2000/Ammo Pack

BC640–16

TO–92

5000 Units/Box

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BC638 Datasheet(PDF) 1 Page - ON Semiconductor

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