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BCW65ALT1 Datasheet(Hoja de datos) 2 Page - ON Semiconductor

No. de Pieza. BCW65ALT1
Descripción  General Purpose Transistors(NPN Silicon) 
Descarga  4 Pages
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Fabricante  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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BCW65ALT1, BCW65CLT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
32
Vdc
Collector − Emitter Breakdown Voltage
(IC = 10 mAdc, VEB = 0)
V(BR)CES
60
Vdc
Emitter − Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc
Collector Cutoff Current
(VCE = 32 Vdc, IE = 0)
(VCE = 32 Vdc, IE = 0, TA = 150°C)
ICES
20
20
nAdc
mAdc
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
IEBO
20
nAdc
ON CHARACTERISTICS
DC Current Gain
BCW65ALT1
(IC = 100 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
hFE
35
75
100
35
250
DC Current Gain
BCW65CLT1
(IC = 100 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
hFE
80
180
250
100
630
Collector − Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)
VCE(sat)
0.7
0.3
Vdc
Base − Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
2.0
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current − Gain — Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
fT
100
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
12
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
80
pF
Noise Figure
(VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 1.0 kW, f = 1.0 kHz, BW = 200 Hz)
NF
10
dB
SWITCHING CHARACTERISTICS
Turn−On Time
(IB1 = IB2 = 15 mAdc)
ton
100
ns
Turn−Off Time
(IC = 150 mAdc, RL = 150 W)
toff
400
ns




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