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BC850CLT1G Datasheet(Hoja de datos) 2 Page - ON Semiconductor

No. de Pieza. BC850CLT1G
Descripción  General Purpose Transistors(NPN Silicon)
Descarga  6 Pages
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Fabricante  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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BC846ALT1 Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage BC846A,B
(IC = 10 mA)
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
V(BR)CEO
65
45
30
V
Collector − Emitter Breakdown Voltage BC846A,B
(IC = 10 mA, VEB = 0)
BC847A,B,C BC850B,C
BC848A,B,C, BC849B,C
V(BR)CES
80
50
30
V
Collector − Base Breakdown Voltage
BC846A,B
(IC = 10 mA)
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
V(BR)CBO
80
50
30
V
Emitter − Base Breakdown Voltage
BC846A,B
(IE = 1.0 mA)
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
V(BR)EBO
6.0
6.0
5.0
V
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ICBO
15
5.0
nA
mA
ON CHARACTERISTICS
DC Current Gain
BC846A, BC847A, BC848A
(IC = 10 mA, VCE = 5.0 V)
BC846B, BC847B, BC848B
BC847C, BC848C
(IC = 2.0 mA, VCE = 5.0 V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B,
BC849B, BC850B
BC847C, BC848C, BC849C, BC850C
hFE
110
200
420
90
150
270
180
290
520
220
450
800
Collector − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector − Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VCE(sat)
0.25
0.6
V
Base − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base − Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VBE(sat)
0.7
0.9
V
Base − Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base − Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
VBE(on)
580
660
700
770
mV
SMALL−SIGNAL CHARACTERISTICS
Current − Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
fT
100
MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Cobo
4.5
pF
Noise Figure (IC = 0.2 mA,
VCE = 5.0 Vdc, RS = 2.0 kW,
BC846A,B, BC847A,B,C, BC848A,B,C
f = 1.0 kHz, BW = 200 Hz)
BC849B,C, BC850B,C
NF
10
4.0
dB
Figure 1.




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