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SI4463BDY-T1-E3 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI4463BDY-T1-E3 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 5 page Si4463BDY Vishay Siliconix New Product www.vishay.com 2 Document Number: 72789 S-40433—Rev. A, 15-Mar-04 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 mA −0.6 −1.4 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "12 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = −20 V, VGS = 0 V −1 mA Zero Gate Voltage Drain Current IDSS VDS = −20 V, VGS = 0 V, TJ = 70_C −10 mA On-State Drain Currenta ID(on) VDS = −5 V, VGS = −4.5 V −30 A VGS = −10 V, ID = −13.7 A 0.0085 0.011 Drain-Source On-State Resistancea rDS(on) VGS = −4.5 V, ID = −12.3 A 0.010 0.014 W DS(on) VGS = −2.5 V, ID = −5 A 0.015 0.020 Forward Transconductancea gfs VDS = −10 V, ID = −13.7 A 44 S Diode Forward Voltagea VSD IS = −2.7 A, VGS = 0 V −0.7 −1.1 V Dynamicb Total Gate Charge Qg 37 56 Gate-Source Charge Qgs VDS = −10 V, VGS = −4.5 V, ID = −13.7 A 8.7 nC Gate-Drain Charge Qgd 11 Gate Resistance Rg f = 1 MHz 2.7 W Turn-On Delay Time td(on) 35 55 Rise Time tr VDD = −10 V, RL = 10 W 60 90 Turn-Off Delay Time td(off) VDD = −10 V, RL = 10 W ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W 115 170 ns Fall Time tf 75 115 Source-Drain Reverse Recovery Time trr IF = −2.3 A, di/dt = 100 A/ms 50 75 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 2.5 0 10 20 30 40 50 0 1234 5 VGS = 10 thru 2.5 V TC = 125_C −55_C 25_C Output Characteristics Transfer Characteristics VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V) 2 V 1.5 V |
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