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M390S2858DT1 Datasheet(PDF) 6 Page - Samsung semiconductor

No. de Pieza. M390S2858DT1
Descripción  128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD
Descarga  12 Pages
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Fabricante  SAMSUNG [Samsung semiconductor]
Página de inicio  http://www.samsung.com/Products/Semiconductor
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M390S2858DT1 Datasheet(HTML) 6 Page - Samsung semiconductor

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REV. 0.0 Jan. 2002
M390S2858DT1
PC133 Registered DIMM
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70
°C)
Parameter
Symbol
Test Condition
Version
Unit
Note
-7C
-7A
Operating current
(One bank active)
ICC1
Burst length =1
tRC
≥ tRC(min)
IO = 0 mA
2840
2660
mA
1
Precharge standby current in
power-down mode
ICC2P
CKE
≤ VIL(max), tCC = 10ns
422
mA
3
ICC2PS
CKE & CLK
≤ VIL(max), tCC = ∞
74
Precharge standby current in
non power-down mode
ICC2N
CKE
≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
1070
mA
3
ICC2NS
CKE
≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
362
Active standby current in
power-down mode
ICC3P
CKE
≤ VIL(max), tCC = 10ns
566
mA
3
ICC3PS
CKE & CLK
≤ VIL(max), tCC = ∞
218
Active standby current in
non power-down mode
ICC3N
CKE
≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
1430
mA
3
ICC3NS
CKE
≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
902
mA
3
Operating current
(Burst mode)
ICC4
IO = 0mA
Page Burst
4 Banks activated
tCCD=2CLK
3020
3020
mA
1
Refresh current
ICC5
tRC
≥ tRC(min)
5000
4640
mA
2
Self refresh current
ICC6
CKE
≤ 0.2V
458
mA
3
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Measured with 1 PLL & 3 Drive ICs.
4. Unless otherwise noted, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ)
Notes :


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