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2SC5938 Datasheet(PDF) 1 Page - Isahaya Electronics Corporation

No. de Pieza. 2SC5938
Descripción  FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
Descarga  4 Pages
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Fabricante  ISAHAYA [Isahaya Electronics Corporation]
Página de inicio  http://www.idc-com.co.jp
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2SC5938 Datasheet(HTML) 1 Page - Isahaya Electronics Corporation

   
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APPLICATION
For muting, switching application
FEATURE
・Small packege for mounting
・High Emitter to Base voltage
VEBO=50V
・High Reverse hFE
・Low ON RESISTANCE. RON=1Ω
DESCRIPTION
ISAHAYA 2SC5938 is a super mini package resin sealed
silicon NPN epitaxial transistor for muting and switching.
application
MAXIMUM RATINGS (Ta=25℃)
VCBO
I C
PC
Tj
Tstg
50
200
+125
-55 ∼ +125
V
mA
mW
Symbol
Parameter
Collector to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temprature
Ratings
Unit
VEBO
V
Emitter to Base voltage
VCEO
12
V
Collector to Emitter voltage
50
150
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Symbol
Parameter
Test conditions
Limits
Min
Typ
Max
Unit
I CBO
fT
Cob
VCB=50V, I E=0mA
VCE=6V, I C=4mA
VCB=10V, I E=0mA, f=1MHz
Gain bandwidth product
Collector output capacitance
I EBO
VEB=50V, IC=0mA
Emitter cut off current
hFE
VCE=2V, I C=4mA
DC forward current gain
Collector cut off current
0.1
0.1
200
1200
30
5.0
μA
μA
MHz
pF
VCE(sat)
I C=30mA, I B=3mA
C to E saturation voltage
30
mV
350 to 1200
hFE
Marking
Item
A
B
200 to 700
5A
5B
2SC5938
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
〈SMALL-SIGNAL TRANSISTOR〉
OUTLINE DRAWING
Unit: : mm
TERMINAL CONNECTOR
1
: BASE
2
: EMITTER
3
: COLLECTOR
EIJA:SC-59
1.5
0.5
0.5
2.5
1
2
3
MARKING
5
A
TYPE NAME
hFE ITEM


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