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ISCNH134P Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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ISCNH134P Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor ISCNH134P ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =250μA 85 V VGS(th) Gate Threshold Voltage VDS=VGS; ID =250μA 2.5 3.2 4.5 V RDS(on) Drain-Source On-Resistance VGS=10V; ID=75A 3.2 3.9 mΩ IGSS Gate-Source Leakage Current VGS= ±20V;VDS=0V ±100 nA IDSS Drain-Source Leakage Current VDS= 85V; VGS= 0V 1 μ A VSD Diode forward voltage IS=150A; VGS = 0V 1.2 V NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. |
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