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STD22NM20N Datasheet(PDF) 3 Page - STMicroelectronics |
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STD22NM20N Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 10 page 3/10 STD22NM20N ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 6: On/Off Table 7: Dynamic (**) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 8: Source Drain Diode (1) Pulse width limited by safe operating area. (2) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 1mA, VGS = 0 200 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 10 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V 100 nA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 3.5 4.2 5 V RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 11 A 0.088 0.105 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (2) Forward Transconductance VDS = 15 V, ID=11 A 8 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 800 330 130 pF pF pF Coss eq. (**) Equivalent Output Capacitiance VGS = 0 V, VDS = 0 V to 400 V 225 pF RG Gate Input Resistance f= 1MHz Gate DC Bias = 0 Test Sgnal Level = 20 mV Open Drain 5 Ω td(on) tr tr(Voff) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time VDD = 100 V, ID = 11 A RG =4.7Ω VGS = 10 V (see Figure 15) 40 15 40 11 ns ns ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 100 V, ID = 20 A, VGS = 10 V (see Figure 19) 32 6 25 50 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (1) Source-drain Current Source-drain Current (pulsed) 22 88 A A VSD (2) Forward On Voltage ISD = 20 A, VGS = 0 1.3 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 20 A, di/dt = 100 A/µs VDD = 100V, Tj = 25°C (see test circuit, Figure 17) 160 960 128 ns µC A trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 20 A, di/dt = 100 A/µs VDD = 100V, Tj = 150°C (see test circuit, Figure 17) 225 1642 15 ns µC A |
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