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FDR54 Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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FDR54 Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
1 / 3 page MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage VR 30 Volts Forward Power Dissipation @ TA = 25°C Derate above 25 °C PD 225 2.0 mW mW/ °C Forward Current (DC) IF 200 Max mA Junction Temperature TJ 125 Max °C Storage Temperature Range Tstg – 55 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (IR = 10 µA) V(BR)R 30 — — Volts Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT — 7.6 10 pF Reverse Leakage (VR = 25 V) IR — 0.5 2.0 µAdc Forward Voltage (IF = 0.1 mAdc) VF — 0.22 0.24 Vdc Forward Voltage (IF = 30 mAdc) VF — 0.41 0.5 Vdc Forward Voltage (IF = 100 mAdc) VF — 0.52 1.0 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1 trr — — 5.0 ns Forward Voltage (IF = 1.0 mAdc) VF — 0.29 0.32 Vdc Forward Voltage (IF = 10 mAdc) VF — 0.35 0.40 Vdc Forward Current (DC) IF — — 200 mAdc Repetitive Peak Forward Current IFRM — — 300 mAdc Non–Repetitive Peak Forward Current (t < 1.0 s) IFSM — — 600 mAdc ANODE 1 CATHODE 3 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. • Extremely Fast Switching Speed • Low Forward Voltage — 0.35 Volts (Typ) @ IF = 10 mAdc Barrier Diodes Schottky • DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping FDR54LT1G 3000/Tape&Reel FDR54LT3G 10000/Tape&Reel JV3 JV3 J We declare that the material of product compliance with RoHS requirements. SEMICONDUCTOR TECHNICAL DATA FDR54 2011. 07. 13 1/3 Revision No : 0 SOT –23 1 3 2 |
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Descripción similar - FDR54 |
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