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CAT25C65 Datasheet(PDF) 2 Page - Catalyst Semiconductor

No. de Pieza. CAT25C65
Descripción  32K/64K-Bit SPI Serial CMOS EEPROM
Descarga  11 Pages
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Fabricante  CATALYST [Catalyst Semiconductor]
Página de inicio  http://www.catalyst-semiconductor.com
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CAT25C65 Datasheet(HTML) 2 Page - Catalyst Semiconductor

 
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CAT25C33/65
Doc. No. 1000, Rev. F
D.C. OPERATING CHARACTERISTICS
VCC = +1.8V to +6.0V, unless otherwise specified.
Limits
Symbol
Parameter
Min.
Typ.
Max.
Units
Test Conditions
ICC1
Power Supply Current
10
mA
VCC = 5V @ 10MHz
(Operating Write)
SO=open; CS=Vss
ICC2
Power Supply Current
2
mA
VCC = 5.0V
(Operating Read)
FCLK = 10MHz
ISB(5)
Power Supply Current
1
µA
CS = VCC
(Standby)
VIN = VSS or VCC
ILI
Input Leakage Current
2
µA
ILO
Output Leakage Current
3
µAVOUT = 0V to VCC,
CS = 0V
VIL(3)
Input Low Voltage
-1
VCC x 0.3
V
VIH(3)
Input High Voltage
VCC x 0.7
VCC + 0.5
V
VOL1
Output Low Voltage
0.4
V
VOH1
Output High Voltage
VCC - 0.8
V
VOL2
Output Low Voltage
0.2
V
1.8V
≤VCC<2.7V
VOH2
Output High Voltage
VCC-0.2
V
IOL = 150
µA
IOH = -100
µA
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias ................. –55
°C to +125°C
Storage Temperature ....................... –65
°C to +150°C
Voltage on any Pin with
Respect to VSS1) ................... –2.0V to +VCC +2.0V
VCC with Respect to VSS ................................ –2.0V to +7.0V
Package Power Dissipation
Capability (Ta = 25
°C)................................... 1.0W
Lead Soldering Temperature (10 secs) ............ 300
°C
Output Short Circuit Current(2) ........................ 100 mA
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation
of the device at these or any other conditions outside of
those listed in the operational sections of this specifica-
tion is not implied. Exposure to any absolute maximum
rating for extended periods may affect device perfor-
mance and reliability.
RELIABILITY CHARACTERISTICS
Symbol
Parameter
Min.
Max.
Units
Reference Test Method
NEND(3)
Endurance
1,000,000
Cycles/Byte
MIL-STD-883, Test Method 1033
TDR(3)
Data Retention
100
Years
MIL-STD-883, Test Method 1008
VZAP(3)
ESD Susceptibility
2000
Volts
MIL-STD-883, Test Method 3015
ILTH(3)(4)
Latch-Up
100
mA
JEDEC Standard 17
Note:
(1) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC
voltage on output pins is VCC +0.5V, which may overshoot to VCC +2.0V for periods of less than 20 ns.
(2) Output shorted for no more than one second. No more than one output shorted at a time.
(3) This parameter is tested initially and after a design or process change that affects the parameter.
(4) Latch-up protection is provided for stresses up to 100 mA on address and data pins from –1V to VCC +1V.
(5) Maximum standby current (ISB ) = 10µA for the Automotive and Extended Automotive temperature range.
4.5V
≤VCC<5.5V
IOL = 3.0mA
IOH = -1.6mA


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