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BH616UV1610 Datasheet(PDF) 6 Page - Brilliance Semiconductor |
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BH616UV1610 Datasheet(HTML) 6 Page - Brilliance Semiconductor |
6 / 10 page BSI BH616UV1610 R0201-BH616UV1610 Revision 1.0 Jul. 2005 6 READ CYCLE 2 (1,3,4) READ CYCLE 3 (1, 4) NOTES: 1. WE is high in read Cycle. 2. Device is continuously selected when CE1 = VIL and CE2= VIH. 3. Address valid prior to or coincident with CE1 transition low and/or CE2 transition high. 4. OE = VIL. 5. Transition is measured ± 500mV from steady state with CL = 5pF. The parameter is guaranteed but not 100% tested. tOH tRC tOE tBE tBDO DOUT CE1 OE ADDRESS tCLZ1 (5) tACS1 tCHZ (1,5) tOHZ (5) tOLZ tAA LB, UB tBA tCLZ2 (5) tCHZ2 (2,5) CE2 tACS2 tCLZ (5,6) DOUT CE2 CE1 tACS2 (6) tACS1 tCHZ (5, 6) |
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