Fabricante Electrónico | No. de pieza | Datasheet | Descripción Electrónicos |
Samsung semiconductor |
KMM5321204C2W
|
286Kb / 17P |
1Mx32 DRAM SIMM (1MX16 Base)
|
KMM5322204C2W
|
287Kb / 17P |
2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V
|
KMM5322200C2W
|
280Kb / 17P |
2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V
|
KMM5361203C2W
|
280Kb / 17P |
1M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh
|
KMM5361205C2W
|
289Kb / 17P |
1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
|
KMM5362205C2W
|
296Kb / 17P |
2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
|
KMM5362203C2W
|
284Kb / 17P |
2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh, 5V
|
White Electronic Design... |
EDI416S4030A
|
1Mb / 27P |
1Mx16 Bits x 4 Banks Synchronous DRAM
|
Hanbit Electronics Co.,... |
HMD1M32M2EG
|
66Kb / 7P |
4Mbyte(1Mx32) EDO Mode, 1K Refresh, 72Pin SIMM, 5V Design
|
HMD1M32M2GL
|
223Kb / 7P |
4Mbyte(1Mx32) Fast Page Mode, 1K Refresh, 72Pin SIMM, 5V Design
|