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2SK2390 Datasheet(PDF) 6 Page - Hitachi Semiconductor

No. de pieza 2SK2390
Descripción Electrónicos  Silicon N-Channel MOS FET
Download  9 Pages
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Fabricante Electrónico  HITACHI [Hitachi Semiconductor]
Página de inicio  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SK2390 Datasheet(HTML) 6 Page - Hitachi Semiconductor

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2SK2390
6
Reverse Drain Current
I
(A)
DR
Body to Drain Diode Reverse
Recovery Time
0.1
0.3
1
3
10
30
100
500
200
100
20
50
10
5
di/dt = 50 A/
µs
V
= 0, Ta = 25
°C
GS
010
20
30
40
50
Drain to Source Voltage V
(V)
DS
Typical Capacitance vs.
Drain to Source Voltage
10
1000
200
500
100
20
50
V
= 0
f = 1 MHz
GS
Ciss
Coss
Crss
100
80
60
40
20
0
Gate Charge
Qg (nc)
20
16
12
8
4
0
Dynamic Input Characteristics
V
= 10 V
25 V
50 V
DD
VGS
DS
V
I
= 15 A
D
V
= 50 V
25 V
10 V
DD
816
24
32
40
Drain Current
I
(A)
D
Switching Characteristics
t f
r
t
d(on)
t
d(off)
t
500
200
100
20
50
10
5
0.2
0.5
1
2
5
10
20
V
= 10 V, V
= 30 V
PW = 5 µs, duty < 1 %
GS
DD


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