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IMH20 Datasheet(Hoja de datos) 2 Page - Rohm

No. de Pieza. IMH20
Descripción  General purpose (dual digital transistors)
Descarga  4 Pages
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Fabricante  ROHM [Rohm]
Página de inicio  http://www.rohm.com
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IMH20
Transistors
2/3
Absolute maximum ratings (Ta = 25
°C)
Parameter
Symbol
Limits
Unit
VCBO
30
V
VCEO
15
V
VEBO
5V
IC
600
mA
Tj
150
°C
Tstg
−55 to +150
°C
Pc
mW
300 (TOTAL)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector power dissipation
200mW per element must not be exceeded.
Electrical characteristics (Ta = 25
°C)
Parameter
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
R1
Min.
30
15
5
100
1.64
250
40
2.2
0.5
0.5
600
80
2.86
VIC=50
µA
IC=1mA
IE=50
µA
VCB=20V
VEB=4V
IC=50mA , VCE=5V
IC/IB=50mA/2.5mA
V
V
µA
µA
mV
k
Typ.
Max.
Unit
Conditions
Ron
0.65
VCE=7V, IE=1k
Ω, f=1KHz
fT
200
VCE=10V, IE=
−50mA, f=100MHz
MHz
Transition frequency of the device
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Output on resistoance
Transition frequency
Collector-emitter saturation voltage
Input resistance
Electrical characteristic curves
Fig.1 DC current gain vs. collector
current
COLLECTOR CURRENT : IC
(A)
VCE=
5V
1m
2m
5m 10m
20m
50m 100m 200m
500m
1k
500
200
100
50
20
10
5
2
1
Ta=100
°C
25
°C
−40°C
Fig.2 Collector-emitter saturation
voltage vs. collector current
COLLECTOR CURRENT : IC
(A)
IC/IB=
20
1m
2m
5m 10m
20m
50m 100m 200m
500m
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
Ta=100
°C
25
°C
−40°C
INPUT VOLTAGE : VI
(V)
f=
1kHz
RL=
1k
hFE=
250(5V/50mA)
100m 200m
500m
1
2
5
10
20
50
100
100
50
20
10
5
2
1
500m
200m
100m
Ta=25
°C
Fig.3 Output on resistance vs. input voltage




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