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FDD26AN06A0 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDD26AN06A0 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 11 page ©2004 Fairchild Semiconductor Corporation FDD26AN06A0 Rev. A Package Marking and Ordering Information Electrical Characteristics T C = 25°C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics (VGS = 10V) Drain-Source Diode Characteristics Notes: 1: Starting TJ = 25°C, L = 83µH, IAS = 29A, VDD = 54V, VGS = 10V. Device Marking Device Package Reel Size Tape Width Quantity FDD26AN06A0 FDD26AN06A0 TO-252AA 330mm 16mm 2500 units Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 60 - - V IDSS Zero Gate Voltage Drain Current VDS = 50V - - 1 µA VGS = 0V TC = 150 oC - - 250 IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2 - 4 V rDS(ON) Drain to Source On Resistance ID = 36A, VGS = 10V - 0.020 0.026 Ω ID = 36A, VGS = 10V, TJ = 175 oC - 0.045 0.058 CISS Input Capacitance VDS = 25V, VGS = 0V, f = 1MHz - 800 - pF COSS Output Capacitance - 155 - pF CRSS Reverse Transfer Capacitance - 55 - pF Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V VDD = 30V ID = 36A Ig = 1.0mA -13 17 nC Qg(TH) Threshold Gate Charge VGS = 0V to 2V - 1.7 2.2 nC Qgs Gate to Source Gate Charge - 4.3 - nC Qgs2 Gate Charge Threshold to Plateau - 2.6 - nC Qgd Gate to Drain “Miller” Charge - 4.6 - nC tON Turn-On Time VDD = 30V, ID = 36A VGS = 10V, RGS = 25Ω - - 123 ns td(ON) Turn-On Delay Time - 9 - ns tr Rise Time - 72 - ns td(OFF) Turn-Off Delay Time - 23 - ns tf Fall Time - 35 - ns tOFF Turn-Off Time - - 88 ns VSD Source to Drain Diode Voltage ISD = 36A - - 1.25 V ISD = 18A - - 1.0 V trr Reverse Recovery Time ISD = 36A, dISD/dt = 100A/µs- - 43 ns QRR Reverse Recovered Charge ISD = 36A, dISD/dt = 100A/µs- - 50 nC |
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