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MMG3012NT1 Datasheet(PDF) 4 Page - NXP Semiconductors

No. de pieza MMG3012NT1
Descripción Electrónicos  Heterojunction Bipolar Transistor Technology (InGaP HBT)
Download  14 Pages
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Fabricante Electrónico  NXP [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo NXP - NXP Semiconductors

MMG3012NT1 Datasheet(HTML) 4 Page - NXP Semiconductors

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4
RF Device Data
Freescale Semiconductor, Inc.
MMG3012NT1
50 OHM TYPICAL CHARACTERISTICS
21
36
4.9
VCC, COLLECTOR VOLTAGE (V)
Figure 8. Third Order Output Intercept Point
versus Collector Voltage
33
30
27
24
4.95
5
5.1
5.05
f = 900 MHz
1 MHz Tone Spacing
100
--40
--20
0
20
40
60
80
28
35
T, TEMPERATURE (_C)
Figure 9. Third Order Output Intercept Point
versus Case Temperature
33
32
31
30
29
Figure 10. Third Order Intermodulation Distortion
versus Output Power
Pout, OUTPUT POWER (dBm)
03
6
9
12
--80
--30
--50
--60
--70
--40
150
103
105
120
Figure 11. MTTF versus Junction Temperature
104
125
130
135
140
145
TJ, JUNCTION TEMPERATURE (C)
NOTE: The MTTF is calculated with VCC =5 Vdc, ICC =70 mA
4
0
8
0
f, FREQUENCY (GHz)
Figure 12. Noise Figure versus Frequency
6
4
2
12
3
--70
--20
2
Pout, OUTPUT POWER (dBm)
Figure 13. Single--Carrier W--CDMA Adjacent
Channel Power Ratio versus Output Power
--30
--40
--50
--60
12
10
8
4
14
16
34
6
VCC =5 Vdc
f = 900 MHz
1 MHz Tone Spacing
VCC =5 Vdc
f = 2140 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 8.5 dB @ 0.01% Probability(CCDF)
15
VCC =5 Vdc
f = 900 MHz
1 MHz Tone Spacing
VCC =5 Vdc


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