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MC74LCX257SD Datasheet(PDF) 4 Page - ON Semiconductor

No. de pieza MC74LCX257SD
Descripción Electrónicos  LOW-VOLTAGE CMOS QUAD 2-INPUT MULTIPLEXER
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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MC74LCX257SD Datasheet(HTML) 4 Page - ON Semiconductor

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MC74LCX257
MOTOROLA
LCX DATA
BR1339 — REV 3
4
DC ELECTRICAL CHARACTERISTICS (continued)
TA = –40°C to +85°C
Symbol
Characteristic
Condition
Min
Max
Unit
II
Input Leakage Current
2.7V
≤ VCC ≤ 3.6V; 0V ≤ VI ≤ 5.5V
±5.0
µA
IOZ
3–State Output Current
2.7
≤ VCC ≤ 3.6V; 0V ≤ VO ≤ 5.5V;
VI = VIH or V IL
±5.0
µA
IOFF
Power–Off Leakage Current
VCC = 0V; VI or VO = 5.5V
10
µA
ICC
Quiescent Supply Current
2.7
≤ VCC ≤ 3.6V; VI = GND or VCC
10
µA
2.7
≤ VCC ≤ 3.6V; 3.6 ≤ VI or VO ≤ 5.5V
±10
µA
∆ICC
Increase in ICC per Input
2.7
≤ VCC ≤ 3.6V; VIH = VCC – 0.6V
500
µA
AC CHARACTERISTICS (tR = tF = 2.5ns; CL = 50pF; RL = 500Ω)
Limits
TA = –40°C to +85°C
VCC = 3.0V to 3.6V
VCC = 2.7V
Symbol
Parameter
Waveform
Min
Max
Max
Unit
tPLH
tPHL
Propagation Delay
In to Zn
1
1.5
1.5
6.0
6.0
6.5
6.5
ns
tPLH
tPHL
Propagation Delay
S to Zn
1,2
1.5
1.5
7.0
7.0
8.5
8.5
ns
tPZH
tPZL
Output Enable Time to HIGH and LOW Level
3
1.5
1.5
7.0
7.0
8.5
8.5
ns
tPHZ
tPLZ
Output Disable Time from HIGH and LOW
Level
3
1.5
1.5
5.5
5.5
6.0
6.0
ns
tOSHL
tOSLH
Output–to–Output Skew
(Note 3.)
1.0
1.0
ns
3. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device.
The specification applies to any outputs switching in the same direction, either HIGH–to–LOW (tOSHL) or LOW–to–HIGH (tOSLH); parameter
guaranteed by design.
DYNAMIC SWITCHING CHARACTERISTICS
TA = +25°C
Symbol
Characteristic
Condition
Min
Typ
Max
Unit
VOLP
Dynamic LOW Peak Voltage (Note 4.)
VCC = 3.3V, CL = 50pF, VIH = 3.3V, VIL = 0V
0.8
V
VOLV
Dynamic LOW Valley Voltage (Note 4.)
VCC = 3.3V, CL = 50pF, VIH = 3.3V, VIL = 0V
0.8
V
4. Number of outputs defined as “n”. Measured with “n–1” outputs switching from HIGH–to–LOW or LOW–to–HIGH. The remaining output is
measured in the LOW state.
CAPACITIVE CHARACTERISTICS
Symbol
Parameter
Condition
Typical
Unit
CIN
Input Capacitance
VCC = 3.3V, VI = 0V or VCC
7
pF
COUT
Output Capacitance
VCC = 3.3V, VI = 0V or VCC
8
pF
CPD
Power Dissipation Capacitance
10MHz, VCC = 3.3V, VI = 0V or VCC
25
pF


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