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ADG936BCP-REEL7 Datasheet(PDF) 1 Page - Analog Devices |
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ADG936BCP-REEL7 Datasheet(HTML) 1 Page - Analog Devices |
1 / 16 page Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT ADG936/ADG936-R Rev. 0 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.326.8703 © 2004 Analog Devices, Inc. All rights reserved. FEATURES Wideband switch: −3 dB @ 4 GHz ADG936 absorptive dual SPDT ADG936-R reflective dual SPDT High off isolation (36 dB @ 1 GHz) Low insertion loss (0.9 dB dc to 1 GHz) Single 1.65 to 2.75 V power supply CMOS/LVTTL control logic 20-lead TSSOP and 4 mm × 4 mm LFCSP package Low power consumption (1 µA max) APPLICATIONS Wireless communications General-purpose RF switching Dual-band applications High speed filter selection Digital transceiver front end switch IF switching Tuner modules Antenna diversity switching FUNCTIONAL BLOCK DIAGRAMS INB RF1B RF2B RFCB ADG936 INA RF1A RF2A RFCA 50 Ω 50 Ω 50 Ω 50 Ω INA INB RF1A RF2A RF1B RF2B RFCB RFCA ADG936-R Figure 1. Figure 2. GENERAL DESCRIPTION The ADG936/ADG936-R are wideband analog switches that comprise two independently selectable SPDT switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG936 is an absorptive/matched dual SPDT with 50 Ω terminated shunt legs; the ADG936-R is a reflective dual SPDT. These devices are designed such that the isolation is high over the dc to 1 GHz frequency range. They have on-board CMOS control logic, eliminating the need for external controlling circuitry. The control inputs are both CMOS and LVTTL compatible. The low power consumption of these CMOS devices makes them ideally suited for wireless applications and general-purpose high frequency switching. PRODUCT HIGHLIGHTS 1. –36 dB off isolation @ 1 GHz. 2. 0.9 dB insertion loss @ 1 GHz. 3. 20-lead TSSOP and 4 mm × 4 mm LFCSP package. FREQUENCY (Hz) 10G 10k 100k 1M 10M 100M 1G –10 –20 –30 –40 –50 –60 –70 –80 S12 S21 VDD = 2.5V TA = 25°C FREQUENCY (Hz) 10G 10k 100k 1M 10M 100M 1G –0.3 –0.4 –0.5 –0.6 –0.7 –0.8 –0.9 –1.0 –1.1 –1.2 –1.3 –1.4 –1.5 –1.6 –1.7 –1.8 –1.9 –2.0 –2.1 –2.2 –2.3 –2.4 –2.5 –2.6 –2.7 –2.8 –2.9 –3.0 VDD = 2.5V TA = 25°C Figure 3. Off Isolation vs. Frequency Figure 4. Insertion Loss vs. Frequency |
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