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2N5671 Datasheet(PDF) 1 Page - Microsemi Corporation

No. de pieza 2N5671
Descripción Electrónicos  NPN HIGH POWER SILICON TRANSISTOR
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Fabricante Electrónico  MICROSEMI [Microsemi Corporation]
Página de inicio  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

2N5671 Datasheet(HTML) 1 Page - Microsemi Corporation

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TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/488
Devices
Qualified Level
2N5671
2N5672
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
2N5671
2N5672
Unit
Collector-Emitter Voltage
VCEO
90
120
Vdc
Collector-Base Voltage
VCBO
120
150
Vdc
Emitter-Base Voltage
VEBO
7.0
Vdc
Base Current
IB
10
Adc
Collector Current
IC
30
Adc
Total Power Dissipation
@ TA = +25
0C (1)
@ TC = +25
0C (2)
PT
6.0
140
W
W
Operating & Storage Temperature Range
Top, Tstg
-65 to +200
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
RθJC
1.25
0C/W
1)
Derate linearly 34.2 mW/
0C for TA > +250C
2)
Derate linearly 800 mW/
0C for TC > +250C
TO-3*
(TO-204AA)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
2N5671
2N5672
V(BR)CEO
90
120
Vdc
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
2N5671
2N5672
V(BR)CER
110
140
Vdc
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
2N5671
2N5672
V(BR)CEX
120
150
Vdc
Collector-Emitter Cutoff Current
VCE = 80 Vdc
ICEO
10
mAdc
Collector-Emitter Cutoff Current
VCE = 110 Vdc, VBE = 1.5 Vdc
2N5671
VCE = 135 Vdc, VBE = 1.5 Vdc
2N5672
ICEX
12
10
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2


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