RYU002N05T306 datasheet(2/8 Pages) VBSEMI

No. de pieza	RYU002N05T306

Descripción Electrónicos	N-Channel 60-V (D-S) MOSFET

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Fabricante Electrónico	VBSEMI [VBsemi Electronics Co.,Ltd]

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Notes:

a. For DESIGN AID ONLY, not subject to production testing.

b. Pulse test: PW

≤ 300 µs duty cycle ≤ 2 %.

c. Switching time is essentially independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Limits

Unit

Min.

Typ.a

Max.

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 10 µA

60

V

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

12.5

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 10

µA

VDS = 0 V, VGS = ± 15 V

1

VDS = 0 V, VGS = ± 10 V

± 150

nA

VDS = 0 V, VGS = ± 10 V, TJ = 85 °C

± 1000

VDS = 0 V, VGS = ± 5 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 60 V, VGS = 0 V

1

µA

VDS = 60 V, VGS = 0 V , TJ = 125 °C

500

On-State Drain Currenta

ID(on)

VGS = 10 V, VDS = 7.5 V

800

mA

VGS = 4.5 V, VDS = 10 V

500

Drain-Source On-Resistancea

RDS(on)

VGS = 10 V, ID = 500 mA

2

Ω

VGS = 4.5 V, ID = 200 mA

4

Forward Transconductancea

gfs

VDS = 10 V, ID = 200 mA

100

mS

Diode Forward Voltage

VSD

IS = 200 mA, VGS = 0 V

1.3

V

Dynamica

Total Gate Charge

Qg

VDS = 10 V, VGS = 4.5 V

ID ≅ 250 mA

0.4

0.6

nC

Input Capacitance

Ciss

VDS = 25 V, VGS = 0 V

f = 1 MHz

30

pF

Output Capacitance

Coss

6

Reverse Transfer Capacitance

Crss

2.5

Switchinga, b, c

Turn-On Time

td(on)

VDD = 30 V, RL = 150 Ω

ID ≅ 200 mA, VGEN = 10 V, RG = 10 Ω

25

ns

Turn-Off Time

td(off)

35

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RYU002N05T306

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