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TLP360J Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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TLP360J Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 4 page TLP360J 2 2003-10-27 Maximum Ratings (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Forward Current IF 50 mA Forward Current Derating (Ta≥53°C) ∆IF /°C −0.7 mA /°C Peak Forward Current (100µs pulse, 100pps) IFP 1 A Reverse Voltage VR 5 V Junction Temperature Tj 125 °C Off-State Output Terminal Voltage VDRM 600 V Ta=25°C 70 On-State RMS Current Ta=70°C IT(RMS) 40 mA On-State Current Derating (Ta≥25°C) ∆IT/°C -0.67 mA /°C Peak On-State Current (100µs pulse, 120pps) ITP 2 A Peak Nonrepetitive Surge Current (Pw=10ms,DC=10%) ITSM 1.2 A Junction Temperature Tj 100 °C Storage Temperature Range Tstg −55~125 °C Operating Temperature Range Topr −40~100 °C Lead Soldering Temperature (10s) Tsol 260 °C Isolation Voltage (AC,1min. , R.H.≤60%) (Note 1) BVS 5000 Vrms (Note 1) : Pins1 and 2 shorted together and pin3 and pin4 shorted together. Recommended Operating Conditions CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT Supply Voltage VAC — — 240 Vac Forward Current IF 15 20 25 mA Peak On-State Current ITP — — 1 A Operating Temperature Topr −25 — 85 °C |
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