SI7923DN datasheet(3/5 Pages) VISHAY

No. de pieza	SI7923DN

Descripción Electrónicos	Dual P-Channel 30-V (D-S) MOSFET

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Fabricante Electrónico	VISHAY [Vishay Siliconix]

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Si7923DN

Vishay Siliconix

New Product

Document Number: 72622

S-51129—Rev. B, 13-Jun-05

www.vishay.com

3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

VSD − Source-to-Drain Voltage (V)

0.00

0.03

0.06

0.09

0.12

0

2468

10

VGS − Gate-to-Source Voltage (V)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.00

0.02

0.04

0.06

0.08

0.10

0.12

04

8

12

16

20

0

2

4

6

8

10

0

3

6

9

12

15

0.6

0.8

1.0

1.2

1.4

1.6

−50

−25

0

25

50

75

100

125

150

0

200

400

600

800

1000

1200

0

5

10

15

20

25

30

Crss

Coss

Ciss

VDS = 10 V

ID = 6.4 A

VGS = 4.5 V

ID = 6.4 A

VGS = 10 V

Gate Charge

On-Resistance vs. Drain Current

Qg − Total Gate Charge (nC)

VDS − Drain-to-Source Voltage (V)

ID − Drain Current (A)

Capacitance

On-Resistance vs. Junction Temperature

TJ − Junction Temperature (_C)

TJ = 150_C

TJ = 25_C

ID = 6.4 A

20

10

1

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

VGS = 4.5 V

Número de pieza similar - SI7923DN

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Vishay Siliconix	SI7923DN	211Kb / 4P	Dual P-Channel 30-V (D-S) MOSFET Rev. B, 20-Feb-06
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Descripción similar - SI7923DN

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