Data Sheet

28

Rev. 1.0

2018-06-14

ITS4130Q-EP-D

130 mΩ Quad Channel Smart High-Side Power Switch

Protection Functions

6.4.2

Temperature Limitation in the Power DMOS

Each channel incorporates one temperature sensor. Activation of this temperature sensor will cause an

overheated channel to switch OFF to prevent destruction. Any protective overtemperature shutdown event

triggered within a channel is switching OFF the output of the corresponding channel until the temperature

reaches an acceptable value again.

A restart functionality is implemented that is switching the channel ON again after the DMOS temperature has

sufficiently cooled down.

6.5

Electrical Characteristics: Protection Functions

Table 5

Typical values are given at

1) Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Integrated

protection functions are designed to prevent IC from destruction under fault conditions described in the data sheet.

Fault conditions are considered as “outside” normal operating range. Protection functions are designed neither for

continuous nor repetitive operation.

Parameter

Symbol

Values

Unit Note or

Test Condition

Number

Min.

Typ.

Max.

Loss of Ground

Output leakage current

while GND disconnected

–0.1

–

mA

2) All pins are disconnected except

3) Not subject to production test; specified by design.

P_6.5.1

Reverse Polarity

Drain source diode voltage

during reverse polarity

–

650

700

mV

P_6.5.2

Overvoltage

Overvoltage protection

65

70

75

V

4) For practical cases it is recommended to place a resistor in the range of ≥ 27 Ω into the GND path to limit the GND

current associated with overvoltage events.

P_6.5.3

Overload Condition

Load current limitation

1.0

1.25

1.5

A

–

P_6.5.4

Thermal shutdown

temperature

150

175

200

°C

3) –

P_6.5.6

Thermal shutdown

hysteresis

Δ

–

30

–

K

3) –

P_6.5.7