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MJ14001 Datasheet(PDF) 2 Page - ON Semiconductor

No. de pieza MJ14001
Descripción Electrónicos  COMPLEMENTARY SILICON POWER TRANSITORS
Download  6 Pages
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
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MJ14001 Datasheet(HTML) 2 Page - ON Semiconductor

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MJ14002 MJ14001 MJ14003
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 200 mAdc, IB = 0)
MJ14001
MJ14002, MJ14003
VCEO(sus)
60
80
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
MJ14001
(VCE = 40 Vdc, IB = 0)
MJ14402, MJ14003
ICEO
1.0
1.0
mA
Collector Cutoff Current
(VCE = 60 Vdc, VBE(off) = 1.5 V)
MJ14001
(VCE = 80 Vdc, VBE(off) = 1.5 V)
MJ14002, MJ14003
ICEX
1.0
1.0
mA
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
MJ14001
(VCB = 80 Vdc, IE = 0)
MJ14002, MJ14003
ICBO
1.0
1.0
mA
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
IEBO
1.0
mA
ON CHARACTERISTICS
DC Current Gain (1)
(IC = 25 Adc, VCE = 3.0 V)
(IC = 50 Adc, VCE = 3.0 V)
(IC = 60 Adc, VCE = 3.0 V)
hFE
30
15
5
100
Collector–Emitter Saturation Voltage (1)
(IC = 25 Adc, IB = 2.5 Adc)
(IC = 50 Adc, IB = 5.0 Adc)
(IC = 60 Adc, IB = 12 Adc)
VCE(sat)
1
2.5
3
Vdc
Base–Emitter Saturation Voltage (1)
(IC = 25 Adc, IB = 2.5 Adc)
(IC = 50 Adc, IB = 5.0 Adc)
(IC = 60 Adc, IB = 12 Adc)
VBE(sat)
2
3
4
Vdc
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
2000
pF
(1) Pulse Test: Pulse Width = 300
µs, Duty Cycle v 2%.
100
Figure 2. Maximum Rated Forward Biased
Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1.0
2.0 3.0
5.0
7.0
100
20
3.0
10
20
50
0.5
0.1
dc
1.0
µs
1.0 ms
0.2
0.3
0.7
1.0
2.0
5.0
7.0
10
50
30
70
70
30
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
TC = 25°C
5.0 ms
MJ14001
MJ14002, MJ14003
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation:
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 2 is based on TJ(pk) = 200_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 200_C. TJ(pk) may be calculated from the data in Fig-
ure 13. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.


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