TEA2095T datasheet(6/19 Pages) NXP

No. de pieza	TEA2095T

Descripción Electrónicos	GreenChip dual synchronous rectifier controller

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Fabricante Electrónico	NXP [NXP Semiconductors]

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NXP Semiconductors

TEA2095T

GreenChip dual synchronous rectifier controller

TEA2095T

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Product data sheet

Rev. 1.1 — 10 April 2020

6 / 19

8.4 Synchronous rectification (SR; DSA, SSA, DSB, and SSB pins)

The IC senses the voltage difference between the drain sense (pins DSA and DSB) and

the source sense (pins SSA and SSB) connections. The drain source differential voltage

of the SR MOSFET is used to drive the gate of the SR MOSFET.

When this absolute voltage difference is higher than Vact(drv), the corresponding gate

driver output turns on the external SR MOSFET. When the external SR MOSFET is

switched on, the absolute voltage difference between the drain and the source sense

connections drops to below Vact(drv). The regulation phase follows the turn-on phase.

In the regulation phase, the IC regulates the difference between the drain and the source

sense inputs to an absolute level (Vreg(drv)). When the absolute difference is higher than

Vreg(drv), the gate driver output increases the gate voltage of the external SR MOSFET

until the Vreg(drv) level is reached. The SR MOSFET does not switch off at low currents.

The IC operates without minimum on-time.

When the absolute difference is lower than Vdeact(drv), the gate driver output decreases

the gate voltage of the external SR MOSFET. The voltage waveform on the gate of the

SR MOSFET follows the waveform of the current through the SR MOSFET. When the

current through the external SR MOSFET reaches zero, the SR MOSFET is quickly

switched off.

After the SR MOSFET switch-off, the drain voltage increases. For a drain voltage above

Vswoff, a low ohmic gate pull-down of Rpd(G) keeps the gate of the SR MOSFET switched

off.

Número de pieza similar - TEA2095T

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