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BQ24160 Datasheet(PDF) 31 Page - Texas Instruments

No. de pieza BQ24160
Descripción Electrónicos  bq2416xx 2.5A, Dual-Input, Single-Cell Switched-Mode Li-Ion Battery Charger with Power Path Management and I2C Interface
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Fabricante Electrónico  TI [Texas Instruments]
Página de inicio  http://www.ti.com
Logo TI - Texas Instruments

BQ24160 Datasheet(HTML) 31 Page - Texas Instruments

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bq24160, bq24160A, bq24161
bq24161B, bq24163, bq24168
www.ti.com
SLUSAO0G – NOVEMBER 2011 – REVISED DECEMBER 2015
Product Folder Links: bq24160 bq24160A bq24161 bq24161B bq24163 bq24168
Submit Documentation Feedback
Copyright © 2011–2015, Texas Instruments Incorporated
RESET Bit
The RESET bit in the control register (0x02h) is used to reset all the charge parameters. Write “1” to
RESET bit to reset all the registers to default values and place the bq2416xx into DEFAULT mode and
turn off the watchdog timer. The RESET bit is automatically cleared to zero once the bq2416xx enters
DEFAULT mode.
CE Bit (Charge Enable)
The CE bit in the control register (0x02h) is used to disable or enable the charge process. A low logic
level (0) on this bit enables the charge and a high logic level (1) disables the charge. When charge is
disabled, the SYS output regulates to VSYS(REG) and battery is disconnected from the SYS.
Supplement mode is still available if the system load demands cannot be met by the supply.
HZ_MODE Bit (High Impedance Mode Enable)
The HZ_MODE bit in the control register (0x02h) is used to disable or enable the high impedance
mode. A low logic level (0) on this bit enables the IC and a high logic level (1) puts the IC in a low
quiescent current state called high impedance mode. When in high impedance mode, the converter is
off and the battery FET and BGATE are on. The load on SYS is supplied by the battery.
9.6.4 Control/Battery Voltage Register (READ/WRITE)
Memory location: 03, Reset state: 0001 0100
BIT
NAME
Read/Write
FUNCTION
B7 (MSB)
VBREG5
Read/Write
Battery Regulation Voltage: 640 mV (default 0)
B6
VBREG4
Read/Write
Battery Regulation Voltage: 320 mV (default 0)
B5
VBREG3
Read/Write
Battery Regulation Voltage: 160 mV (default 0)
B4
VBREG2
Read/Write
Battery Regulation Voltage: 80 mV (default 1)
B3
VBREG1
Read/Write
Battery Regulation Voltage: 40 mV (default 0)
B2
VBREG0
Read/Write
Battery Regulation Voltage: 20 mV (default 1)
B1
IINLIMIT
Read/Write
Input Limit for IN input-
0 – 1.5A
1 – 2.5A (default 0)
B0 (LSB)
D+/D–_EN
Read/Write
0 – Normal state, D+/D- Detection done
1 – Force D+/D– Detection. Returns to “0” after detection is done. (default 0)
Charge voltage range is 3.5V–4.44V with the offset of 3.5V and step of 20mV (default 3.6V).
Before writing to increase VBATREG register following a BATOVP event (e.g., IN or USB voltage is applied,
IC remains in DEFAULT mode and then VBAT>3.6V is attached), toggle the HiZ bit or CD pin to clear the
BATOVP fault.
9.6.5 Vender/Part/Revision Register (READ only)
Memory location: 04, Reset state: 0100 0000
BIT
NAME
Read/Write
FUNCTION
B7 (MSB)
Vender2
Read only
Vender Code: bit 2 (default 0)
B6
Vender1
Read only
Vender Code: bit 1 (default 1)
B5
Vender0
Read only
Vender Code: bit 0 (default 0)
B4
PN1
Read only
For I2C Address 6Bh:
00: bq2416xx
01–11: Future product spins
B3
PN0
Read only


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