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MMBT2222ALT1G Datasheet(PDF) 2 Page - ON Semiconductor

No. de pieza MMBT2222ALT1G
Descripción Electrónicos  General Purpose Transistors
Download  8 Pages
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MMBT2222ALT1G Datasheet(HTML) 2 Page - ON Semiconductor

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MMBT2222LT1, MMBT2222ALT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
MMBT2222
MMBT2222A
V(BR)CEO
30
40
Vdc
Collector − Base Breakdown Voltage (IC = 10 mAdc, IE = 0)
MMBT2222
MMBT2222A
V(BR)CBO
60
75
Vdc
Emitter − Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
MMBT2222
MMBT2222A
V(BR)EBO
5.0
6.0
Vdc
Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
MMBT2222A
ICEX
10
nAdc
Collector Cutoff Current (VCB = 50 Vdc, IE = 0)
MMBT2222
(VCB = 60 Vdc, IE = 0)
MMBT2222A
(VCB = 50 Vdc, IE = 0, TA = 125°C)
MMBT2222
(VCB = 60 Vdc, IE = 0, TA = 125°C)
MMBT2222A
ICBO
0.01
0.01
10
10
mAdc
Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0)
MMBT2222A
IEBO
100
nAdc
Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
MMBT2222A
IBL
20
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = −55°C)
MMBT2222A only
(IC = 150 mAdc, VCE = 10 Vdc) (Note 3)
(IC = 150 mAdc, VCE = 1.0 Vdc) (Note 3)
(IC = 500 mAdc, VCE = 10 Vdc) (Note 3)
MMBT2222
MMBT2222A
hFE
35
50
75
35
100
50
30
40
300
Collector − Emitter Saturation Voltage (Note 3)
(IC = 150 mAdc, IB = 15 mAdc)
MMBT2222
MMBT2222A
(IC = 500 mAdc, IB = 50 mAdc)
MMBT2222
MMBT2222A
VCE(sat)
0.4
0.3
1.6
1.0
Vdc
Base − Emitter Saturation Voltage (Note 3)
(IC = 150 mAdc, IB = 15 mAdc)
MMBT2222
MMBT2222A
(IC = 500 mAdc, IB = 50 mAdc)
MMBT2222
MMBT2222A
VBE(sat)
0.6
1.3
1.2
2.6
2.0
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current − Gain − Bandwidth Product (Note 4)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
MMBT2222
MMBT2222A
fT
250
300
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
8.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
MMBT2222
MMBT2222A
Cibo
30
25
pF
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A
hie
2.0
0.25
8.0
1.25
k
W
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A
hre
8.0
4.0
X 10−4
Small − Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A
hfe
50
75
300
375
3. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.


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