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UMSB30B Datasheet(PDF) 1 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD |
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UMSB30B Datasheet(HTML) 1 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD |
1 / 3 page UMSB30B THRU UMSB30M UMSB 1 / 3 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. 3.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Reverse Voltage - 100 to 1000 V Forward Current – 3.0A FEATURES Fast reverse recovery time Designed for Surface Mount Application Glass Passivated Chip Junction Low power loss, high efficiency Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA Case: UMSB Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.234g / 0.00825oz 1.Input pin(-) 2.Input pin(+) 3.Output Anode(~) 4.Output Cathode(~) UMSB Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Parameter Symbols UMSB30B UMSB30D UMSB30G UMSB30J UMSB30K UMSB30M Units Maximum Repetitive Peak Reverse Voltage VRRM 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 100 200 400 600 800 1000 V Average Rectified Output Current at Tc = 125 °C Io 3.0 A Peak Forward Surge Current 8.3 ms Single Half Sine-Wave Superimposed on Rated Load(JEDEC method) IFSM 80 A Forward Voltage per element at 3.0A VF 1.0 1.4 1.6 V Maximum DC Reverse Current at Rated DC Blocking Voltage @ TA=25°C IR 5.0 μA @ TA=125°C 100 Typical Junction Capacitance ( Note1) Cj 50 pF Maximum Reverse Recovery Time ( Note2) TRR 50 75 nS Typical Thermal Resistance ( Note3) RθJA 40 °C/W Operating and Storage Temperature Range Tj, Tstg -55 ~ +150 °C (1)Measured at 1 MHz and applied reverse voltage of 4 V D.C (2)Mounted on glass epoxy PC board with 4×1.5"×1.5"(3.81×3.81 cm) copper pad. |
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