YFW1002 datasheet(2/6 Pages) YFWDIODE

No. de pieza	YFW1002

Descripción Electrónicos	N-Channel Enhancement MOSFET

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Fabricante Electrónico	YFWDIODE [DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD]

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YFW1002 SOT23-3L

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Dongguan YFW Electronics Co, Ltd.

Gate-Body Leakage Current

IGSS

VGS=±20V,VDS=0V

-

±100

nA

On Characteristics

(Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250µ

Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=1A

-

185

220

m

Forward Transconductance

gFS

VDS=5V,ID=1A

1

-

S

Dynamic Characteristics

(Note4)

Input Capacitance

Clss

-

190

-

PF

Output Capacitance

Coss

-

22

-

PF

Reverse Transfer Capacitance

Crss

VDS=50V,VGS=0V,

F=1.0MHz

-

13

-

PF

Switching Characteristics

(Note 4)

Turn-on Delay Time

td(on)

-

6

-

nS

Turn-on Rise Time

tr

-

10

-

nS

Turn-Off Delay Time

td(off)

-

10

-

nS

Turn-Off Fall Time

tf

VDD=50V,ID=1.3A,RL=39

VGS=10V,RG=1

-

6

-

nS

Total Gate Charge

Qg

-

5.2

nC

Gate-Source Charge

Qgs

-

0.75

-

nC

Gate-Drain Charge

Qgd

VDS=50V,ID=1.3A,

VGS=10V

-

1.4

-

nC

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

VSD

VGS=0V,IS=1.3A

-

1.2

V

Diode Forward Current

(Note 2)

IS

-

2

A

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

A

1.2

2.0

2.5

V

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=250µA

100

110

-

V

Zero Gate Voltage Drain Current

IDSS

VDS=100V,VGS=0V

-

1

µA

Electrical Characteristics Ta = 25

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YFW1002 Datasheet(PDF) 2 Page - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

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