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P2N2222A Datasheet(PDF) 1 Page - ON Semiconductor |
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P2N2222A Datasheet(HTML) 1 Page - ON Semiconductor |
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© Semiconductor Components Industries, LLC, 2007 April, 2007 -- Rev. 5 1 Publication Order Number: P2N2222A/D P2N2222A Amplifier Transistors NPN Silicon Features • These are Pb--Free Devices* MAXIMUM RATINGS (TA =25°C unless otherwise noted) Characteristic Symbol Value Unit Collector--Emitter Voltage VCEO 40 Vdc Collector--Base Voltage VCBO 75 Vdc Emitter--Base Voltage VEBO 6.0 Vdc Collector Current -- Continuous IC 600 mAdc Total Device Dissipation @ TA =25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC =25°C Derate above 25°C PD 1.5 12 W mW/°C Operating and Storage Junction Temperature Range TJ,Tstg --55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RθJA 200 °C/W Thermal Resistance, Junction to Case RθJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com P2N2222ARL1G TO--92 (Pb--Free) 5000 Units/Bulk Device Package Shipping† P2N2222AG TO--92 (Pb--Free) 2000/Tape & Ammo ORDERING INFORMATION COLLECTOR 1 2 BASE 3 EMITTER †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 2 3 1 2 BENT LEAD TAPE & REEL AMMO PACK STRAIGHT LEAD BULK PACK 3 TO--92 CASE 29 STYLE 17 MARKING DIAGRAM P2N2 222A AYWW G G A = Assembly Location Y = Year WW = Work Week G = Pb--Free Package (Note: Microdot may be in either location) |
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