© Semiconductor Components Industries, LLC, 2007

April, 2007 -- Rev. 5

1

Publication Order Number:

P2N2222A/D

P2N2222A

Amplifier Transistors

NPN Silicon

Features

Characteristic

Symbol

Value

Unit

Collector--Emitter Voltage

40

Vdc

Collector--Base Voltage

75

Vdc

Emitter--Base Voltage

6.0

Vdc

Collector Current -- Continuous

600

mAdc

Derate above 25°C

625

5.0

mW

mW/°C

Derate above 25°C

1.5

12

W

mW/°C

Operating and Storage Junction

Temperature Range

--55 to

+150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

200

°C/W

Thermal Resistance, Junction to Case

83.3

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb--Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

P2N2222ARL1G

TO--92

(Pb--Free)

5000 Units/Bulk

Device

Package

P2N2222AG

TO--92

(Pb--Free)

2000/Tape & Ammo

ORDERING INFORMATION

COLLECTOR

1

2

BASE

3

EMITTER

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

1 2

3

1

2

BENT LEAD

TAPE & REEL

AMMO PACK

STRAIGHT LEAD

BULK PACK

3

TO--92

CASE 29

STYLE 17

MARKING DIAGRAM

P2N2

222A

AYWW G

G

A

= Assembly Location

Y

= Year

WW = Work Week

G

= Pb--Free Package

(Note: Microdot may be in either location)