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IXSN80N60A Datasheet(PDF) 2 Page - IXYS Corporation

No. de pieza IXSN80N60A
Descripción Electrónicos  High Current IGBT - Short Circuit SOA Capability
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Fabricante Electrónico  IXYS [IXYS Corporation]
Página de inicio  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXSN80N60A Datasheet(HTML) 2 Page - IXYS Corporation

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© 2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
I
C
= I
C90; VCE = 10 V
46
S
Pulse test, t
£ 300 ms, duty cycle d £ 2 %
C
ies
8500
pF
C
oes
V
CE = 25 V, VGE = 0 V, f = 1 MHz
650
pF
C
res
120
pF
Q
g
335
nC
Q
ge
I
C = IC90, VGE = 15 V, VCE = 0.5 VCES
88
nC
Q
gc
158
nC
t
d(on)
140
ns
t
ri
220
ns
t
d(off)
300
600
ns
t
fi
450
600
ns
E
off
10
mJ
t
d(on)
140
ns
t
ri
250
ns
E
(on)
8mJ
t
d(off)
520
ns
t
fi
550
ns
E
off
13
mJ
R
thJC
0.25 K/W
R
thCK
0.05
K/W
Inductive load, T
J = 25°C
I
C = IC90, VGE = 15 V, L = 100 mH,
V
CE = 0.8 VCES, RG = 2.7 W
Remarks: Switching times may increase for V
CE (Clamp)
> 0.8 V
CES, higher TJ or increased RG
Inductive load, T
J = 25°C
I
C = IC90, VGE = 15 V, L = 100 mH,
V
CE = 0.8 VCES, RG = 2.7 W
Remarks: Switching times may increase for V
CE (Clamp)
> 0.8 V
CES, higher TJ or increased RG
M4 screws (4x) supplied
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
31.50
31.88
1.240
1.255
B
7.80
8.20
0.307
0.323
C
4.09
4.29
0.161
0.169
D
4.09
4.29
0.161
0.169
E
4.09
4.29
0.161
0.169
F
14.91
15.11
0.587
0.595
G
30.12
30.30
1.186
1.193
H
38.00
38.23
1.496
1.505
J
11.68
12.22
0.460
0.481
K
8.92
9.60
0.351
0.378
L
0.76
0.84
0.030
0.033
M
12.60
12.85
0.496
0.506
N
25.15
25.42
0.990
1.001
O
1.98
2.13
0.078
0.084
P
4.95
5.97
0.195
0.235
Q
26.54
26.90
1.045
1.059
R
3.94
4.42
0.155
0.174
S
4.72
4.85
0.186
0.191
T
24.59
25.07
0.968
0.987
U
-0.05
0.1
-0.002
0.004
miniBLOC, SOT-227 B
IXSN80N60A
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025


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