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BUK954R4-40B Datasheet(PDF) 3 Page - NXP Semiconductors |
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BUK954R4-40B Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 16 page Philips Semiconductors BUK95/96/9E4R4-40B TrenchMOS™ logic level FET Product data Rev. 02 — 13 October 2003 3 of 16 9397 750 12051 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. VGS ≥ 5V Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Continuous drain current as a function of mounting base temperature. Tmb =25 °C; IDM single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 03na19 0 40 80 120 0 50 100 150 200 Tmb (°C) Pder (%) 03nl57 0 50 100 150 200 0 50 100 150 200 Tmb (°C) ID (A) Capped at 75 A due to package P der P tot P tot 25 C ° () ----------------------- 100% × = 03nl58 1 10 102 103 10-1 1 10 102 VDS (V) ID (A) DC 100 ms 10 ms Limit RDSon = VDS/ID 1 ms tp = 10 µs 100 µs Capped at 75 A due to package |
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