BUK954R4-40B datasheet(3/16 Pages) PHILIPS

No. de pieza	BUK954R4-40B

Descripción Electrónicos	TrenchMOS logic level FET

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Philips Semiconductors

BUK95/96/9E4R4-40B

TrenchMOS™ logic level FET

Product data

Rev. 02 — 13 October 2003

3 of 16

9397 750 12051

VGS ≥ 5V

Fig 1.

Normalized total power dissipation as a

function of mounting base temperature.

Fig 2.

Continuous drain current as a function of

mounting base temperature.

Tmb =25 °C; IDM single pulse.

Fig 3.

Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

03na19

0

40

80

120

0

50

100

150

200

Tmb

(°C)

Pder

(%)

03nl57

0

50

100

150

200

0

50

100

150

200

Tmb (°C)

ID

(A)

Capped at 75 A due to package

P

der

P

tot

P

tot 25 C

°

()

-----------------------

100%

×

=

03nl58

1

10

102

103

10-1

1

10

102

VDS (V)

ID

(A)

DC

100 ms

10 ms

Limit RDSon = VDS/ID

1 ms

tp = 10 µs

100

µs

Capped at 75 A due to package

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