type apply over the full operating ambient temperature range (−30˚C

≤ T

≤ +85˚C). Unless otherwise noted,

specifications apply to the LM3203 with: PV

Symbol

Parameter

Conditions

Min

Typ

Max

Units

Gain

V

1

V/V

Z

CON

V

V

1

M

Ω

range if the component values in the typical application circuit are used. These parameters are not guaranteed by produc-

tion testing.

Symbol

Parameter

Conditions

Min

Typ

Max

Units

T

to 3.4V in PWM mode

V

R

Ω

L = 3.3uH (I

EN = Low to High

50

µs

T

from 0.8V to 3.6V in

PWM Mode

V

R

Ω

L = 3.3uH (I

30

µs

C

CON

V

Capacitance

V

Test frequency = 100kHz

15

pF

T

ON_BYP

Bypass FET Turn On

Time In Bypass Mode

V

C

Ω

BYP = Low to High

30

µs

Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under which operation of

the device is guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits and associated test conditions, see the

Electrical Characteristics tables.

Note 2: All voltages are with respect to the potential at the GND pins.

130˚C (typ.).

Note 4: The Human body model is a 100pF capacitor discharged through a 1.5k

Ω resistor into each pin. (MIL-STD-883 3015.7) . National Semiconductor

recommends that all integrated circuits be handled with appropriate precautions.

Note 5: In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be

Note 6: Junction-to-ambient thermal resistance (

standard JESD51-2. A 1" x 1", 4 layer, 1.5oz. Cu board was used for the measurements.

Note 7: Min and Max limits are guaranteed by design, test, or statistical analysis. Typical numbers are not guaranteed, but do represent the most likely norm.

Note 8: The LM3203 is designed for mobile phone applications where turn-on after power-up is controlled by the system controller and where requirements for a

small package size overrule increased die size for internal Under Voltage Lock-Out (UVLO) circuitry. Thus, it should be kept in shutdown by holding the EN pin low

until the input voltage exceeds 2.7V.

The OVP threshold will be the value of the threshold at the FB voltage times the resistor divider ratio. In the Figure 1, 100mV (typ.) x ((267K + 133K) ÷ 133K).

Note 10: Shutdown current includes leakage current of PFET and Bypass FET.

Note 11: Electrical Characteristic table reflects open loop data (FB=0V and current drawn from SW pin ramped up until cycle by cycle current limit is activated).

Refer to datasheet curves for closed loop data and its variation with regards to supply voltage and temperature. Closed loop current limit is the peak inductor current

measured in the application circuit by increasing output current until output voltage drops by 10%.

www.national.com

4