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AM4410N Datasheet(PDF) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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AM4410N Datasheet(HTML) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
1 / 4 page www.doingter.cn — 1 — Description: This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features: 1) VDS=30V,ID=10A,RDS(ON)<13mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings:(T C=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID Drain Current – Continuous (TC=25℃ ) 10 A Drain Current – Continuous (TC=100℃ ) 6 IDM Drain Current – Pulsed 50 PD Power Dissipation (TC=25℃ ) 2.5 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics: Symbol Parameter Max Units RƟJA Thermal Resistance,Junction to Ambient 2 50 Package Marking and Ordering Information: Part NO. Marking Package SC012NG S12N03 SOP-8 G D D D D S1 S S AM 4410N |
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