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AM4530C Datasheet(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

No. de pieza AM4530C
Descripción Electrónicos  N-Channel and P-Channel MOSFET use advanced trench Technology
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Fabricante Electrónico  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Página de inicio  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

AM4530C Datasheet(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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N-Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=-0V,ID=250μA
30
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=24V
---
---
1
μA
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
0.7
---
1.3
V
RDS(ON)
Drain-Source On Resistance
VGS=10V,ID=6A
---
24
32
mΩ
---
32.3
38
VGS=4.5V,ID=5A
27
36
GFS
Forward Transconductance
VDS=5V, ID=5A
---
9
---
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS=15V, VGS=0V, f=1MHz
---
680
---
pF
Coss
Output Capacitance
---
102
---
Crss
Reverse Transfer Capacitance
---
77
---
Rg
3
Ω
Switching Characteristics
td(on)
Turn-On Delay Time
VDs=-15V, RGEN=2.1
Ω,VGS=10V
---
4.6
---
ns
tr
Rise Time
---
4.1
---
ns
td(off)
Turn-Off Delay Time
---
20.6
---
ns
tf
Fall Time
---
5.2
---
ns
---
mΩ
μA
---
---
VGS=10V
ID=6A
TJ=125℃
Gate resistance
VDS=0V
VGS=0V
f=1.0MHz
AM 4530C


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