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IRF3707ZCLPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRF3707ZCLPBF Datasheet(HTML) 1 Page - International Rectifier |
1 / 11 page www.irf.com 1 6/29/04 IRF3707ZCSPbF IRF3707ZCLPbF HEXFET® Power MOSFET Notes through are on page 11 Applications Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free D2Pak IRF3707ZCS TO-262 IRF3707ZCL Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TC = 25°C Continuous Drain Current, VGS @ 10V A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current c PD @TC = 25°C Maximum Power Dissipation W PD @TC = 100°C Maximum Power Dissipation Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 2.653 °C/W RθJA Junction-to-Ambient (PCB Mount) g ––– 40 300 (1.6mm from case) -55 to + 175 10 lbf xin (1.1 Nxm) 57 0.38 28 Max. 59 h 42 h 230 ± 20 30 VDSS RDS(on) max Qg 30V 9.5m : 9.7nC PD - 95464 |
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