2SD1975 datasheet(1/3 Pages) PANASONIC

No. de pieza	2SD1975

Descripción Electrónicos	Silicon PNP triple diffusion planar type(For high power amplification)

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Fabricante Electrónico	PANASONIC [Panasonic Semiconductor]

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1

Power Transistors

Unit: mm

1:Base

2:Collector

3:Emitter

TOP–3L Package

20.0

±0.5

10.9

±0.5

123

2.0

±0.3

3.0

±0.3

1.0

±0.2

5.0

±0.3

3.0

5.45

±0.3

0.6

±0.2

1.5

2.7

±0.3

1.5

φ 3.3±0.2

2SB1317

Silicon PNP triple diffusion planar type

For high power amplification

Complementary to 2SD1975

s Features

q

Satisfactory foward current transfer ratio hFE vs. collector cur-

rent IC characteristics

q

Wide area of safe operation (ASO)

q

High transition frequency fT

q

Optimum for the output stage of a HiFi audio amplifier

s Absolute Maximum Ratings (T

C=25˚C)

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power

dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

ICP

IC

PC

Tj

Tstg

Ratings

–180

–5

–25

–15

150

3.5

150

–55 to +150

Unit

V

A

W

˚C

s Electrical Characteristics (T

C=25˚C)

Parameter

Collector cutoff current

Emitter cutoff current

Forward current transfer ratio

Base to emitter voltage

Collector to emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

ICBO

IEBO

hFE1

hFE2

*

hFE3

VBE

VCE(sat)

fT

Cob

Conditions

VCB = –180V, IE = 0

VEB = –3V, IC = 0

VCE = –5V, IC = –20mA

VCE = –5V, IC = –1A

VCE = –5V, IC = –8A

IC = –10A, IB = –1A

VCE = –5V, IC = – 0.5A, f = 1MHz

VCB = –10V, IE = 0, f = 1MHz

min

20

60

20

typ

20

450

max

–50

200

–1.8

–2.5

Unit

µA

V

MHz

pF

TC=25°C

Ta=25

°C

*h

FE2 Rank classification

Rank

Q

S

P

hFE2

60 to 120

80 to 160

100 to 200

Número de pieza similar - 2SD1975

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Panasonic Semiconductor	2SD1975	54Kb / 3P	Silicon NPN triple diffusion planar type(For high power amplification)
Inchange Semiconductor ...	2SD1975	104Kb / 4P	Silicon NPN Power Transistors
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Savantic, Inc.	2SD1975	205Kb / 4P	Silicon NPN Power Transistors
Panasonic Semiconductor	2SD1975A	54Kb / 3P	Silicon NPN triple diffusion planar type(For high power amplification)

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