2SC5954Q datasheet(1/2 Pages) PANASONIC

No. de pieza	2SC5954Q

Descripción Electrónicos	Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio

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Fabricante Electrónico	PANASONIC [Panasonic Semiconductor]

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Power Transistors

1

Publication date: July 2004

SJD00319AED

2SC5954

Silicon NPN triple diffusion planar type

For power amplification with high forward current transfer ratio

■ Features

• High forward current transfer ratio h

FE which has satisfactory linearity.

• Low collector-emitter saturation voltage V

CE(sat)

• Full-pack package which can be installed to the heat sink with one

screw.

■ Absolute Maximum Ratings T

C

= 25°C

■ Electrical Characteristics T

C = 25°C ± 3°C

1.4±0.2

1.6±0.2

0.8±0.1

0.55±0.15

2.54±0.30

5.08±0.50

12

3

2.6±0.1

2.9±0.2

4.6±0.2

φ 3.2±0.1

9.9±0.3

Unit: mm

1: Base

2: Collector

3: Emitter

TO-220D-A1 Package

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

VCBO

80

V

Collector-emitter voltage (Base open)

VCEO

60

V

Emitter-base voltage (Collector open)

VEBO

6V

Collector current

IC

3A

Peak collector current

ICP

6A

Collector power dissipation

PC

25

W

Ta = 25°C

2.0

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-emitter voltage (Base open)

VCEO

IC = 10 mA, IB = 060

V

Collector-base cutoff current (Emitter open)

ICBO

VCB

= 80 V, I

E

= 0

100

µA

Collector-emitter cutoff current (Base open)

ICEO

VCE = 40 V, IB = 0

100

µA

Emitter-base cutoff current (Collector open)

IEBO

VEB = 6 V, IC = 0

100

µA

Forward current transfer ratio

hFE1 *

VCE

= 4 V, I

C

= 0.5 A

500

2 300



hFE2

VCE = 4 V, IC = 3 A

100

Collector-emitter saturation voltage

VCE(sat)

IC = 1 A, IB = 20 mA

0.6

V

Transition frequency

fT

VCE

= 10 V, I

C

= 0.1 A, f = 10 MHz

200

MHz

Turn-on time

ton

IC = 1 A, Resistance loaded

0.2

µs

Storage time

tstg

IB1 = 0.1 A, IB2 = − 0.1 A

1.5

µs

Fall time

tf

VCC

= 50 V

0.1

µs

Rank

Q

P

hFE1

500 to 1 500

1 300 to 2 300

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Internal Connection

B

C

E

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