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2SC5954Q Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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2SC5954Q Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page Power Transistors 1 Publication date: July 2004 SJD00319AED 2SC5954 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio ■ Features • High forward current transfer ratio h FE which has satisfactory linearity. • Low collector-emitter saturation voltage V CE(sat) • Full-pack package which can be installed to the heat sink with one screw. ■ Absolute Maximum Ratings T C = 25°C ■ Electrical Characteristics T C = 25°C ± 3°C 1.4±0.2 1.6±0.2 0.8±0.1 0.55±0.15 2.54±0.30 5.08±0.50 12 3 2.6±0.1 2.9±0.2 4.6±0.2 φ 3.2±0.1 9.9±0.3 Unit: mm 1: Base 2: Collector 3: Emitter TO-220D-A1 Package Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 80 V Collector-emitter voltage (Base open) VCEO 60 V Emitter-base voltage (Collector open) VEBO 6V Collector current IC 3A Peak collector current ICP 6A Collector power dissipation PC 25 W Ta = 25°C 2.0 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) VCEO IC = 10 mA, IB = 060 V Collector-base cutoff current (Emitter open) ICBO VCB = 80 V, I E = 0 100 µA Collector-emitter cutoff current (Base open) ICEO VCE = 40 V, IB = 0 100 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 100 µA Forward current transfer ratio hFE1 * VCE = 4 V, I C = 0.5 A 500 2 300 hFE2 VCE = 4 V, IC = 3 A 100 Collector-emitter saturation voltage VCE(sat) IC = 1 A, IB = 20 mA 0.6 V Transition frequency fT VCE = 10 V, I C = 0.1 A, f = 10 MHz 200 MHz Turn-on time ton IC = 1 A, Resistance loaded 0.2 µs Storage time tstg IB1 = 0.1 A, IB2 = − 0.1 A 1.5 µs Fall time tf VCC = 50 V 0.1 µs Rank Q P hFE1 500 to 1 500 1 300 to 2 300 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Internal Connection B C E |
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