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STB70NF03L-1 Datasheet(PDF) 3 Page - STMicroelectronics |
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STB70NF03L-1 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 11 page 3/11 STB70NF03L STP70NF03L SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. ( •)Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 15 V ID = 35 A RG = 4.7 Ω VGS = 5 V (Resistive Load, Figure 3) 22 165 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 15V ID= 70A VGS= 5V 22.5 9 12 30 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 15 V ID = 35 A RG = 4.7Ω, VGS = 5 V (Resistive Load, Figure 3) 21 25 ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 70 280 A A VSD (*) Forward On Voltage ISD = 70 A VGS = 0 1.3 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 70 A di/dt = 100A/µs VDD = 20 V Tj = 150°C (see test circuit, Figure 5) 42 52 2.5 ns nC A ELECTRICAL CHARACTERISTICS (continued) Safe Operating Area Thermal Impedance |
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