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TLP114AIGM Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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TLP114AIGM Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page TLP114A(IGM) 2002-09-25 2 Maximum Ratings(Ta = 25°C) Characteristic Symbol Rating Unit Forward current (Note 1) IF 20 mA Pulse forward current (Note 2) IFP 40 mA Peak transient forward current (Note 3) IFPT 1 A Reverse voltage VR 5 V Output current IO 8 mA Peak output current IOP 16 mA Output voltage VO -0.5~20 V Supply voltage VCC -0.5~30 V Output power dissipation (Note 4) PO 100 mW Operating temperature range Topr -55~100 °C Storage temperature range Tstg -55~125 °C Lead soldering temperature(10s) Tsol 260 °C Isolation voltage(AC, 1min., R.H.≤60%, Ta=25°C) (Note 5) BVS 3750 Vrms (Note 1): Derate 0.36mA above 70°C. (Note 2): 50% duty cycle, 1ms pulse width. Derate 0.72mA / °C above 70°C. (Note 3): Pulse width PW ≤ 1µs, 300pps. (Note 4): Derate 1.8mW / °C above 70°C. (Note 5): Device considerd a two terminal device: pins1, 3 shorted together and pins4, 5, 6 shorted together. |
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